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PDF BSO612CVG Data sheet ( Hoja de datos )
| Número de pieza | BSO612CVG | |
| Descripción | Small-Signal-Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Rev. 2.1
BSO 612 CV G
SIPMOS® Small-Signal-Transistor
Product Summary
Features
· Dual N- and P -Channel
· Enhancement mode
· Avalanche rated
Drain source voltage
Drain-Source on-state
resistance
Continuous drain current
· Pb-free lead plating;RoHS compliant
VDS
RDS(on)
ID
N
60
0.12
3
P
-60 V
0.3 W
-2 A
Type
Package
Marking
BSO 612 CV PG-DSO-8
612CV
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TA = 25 °C
TA = 70 °C
Pulsed drain current
TA = 25 °C
Avalanche energy, single pulse
WID = 3 A, VDD = 25 V, RGS = 25
WID = -2 A, VDD = -25 V, RGS = 25
Avalanche energy, periodic limited by Tjmax
Reverse diode dv/dt, Tjmax = 150 °C
IS = 3 A, VDS = 48 V, di/dt = 200 A/µs
IS = -2 A, VDS = -48 V, di/dt = -200 A/µs
Gate source voltage
Power dissipation
TA = 25 °C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
ID
ID puls
EAS
EAR
dv/dt
VGS
Ptot
Tj , Tstg
Value
NP
3 -2
2.4 -1.6
12 -8
47 -
- 70
0.2 0.2
6-
-6
±20 ±20
22
-55...+150
55/150/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2012-04-04
1 page  
Power Dissipation (N-Ch.)
Ptot = f (TA)
Rev. 2.1
BSO 612 CV G
Power Dissipation (P-Ch.)
Ptot = f (TA)
BSO 612 CV
2.2
W
BSO 612 CV
2.2
W
1.8 1.8
1.6 1.6
1.4 1.4
1.2 1.2
1.0 1.0
0.8 0.8
0.6 0.6
0.4 0.4
0.2 0.2
0.0
0
20 40 60 80 100 120 °C 160
TA
0.0
0
20 40 60 80 100 120 °C 160
TA
Drain current (N-Ch.)
ID = f (TA)
parameter: VGS³ 10 V
BSO 612 CV
3.2
A
2.4
Drain current (P-Ch.)
ID = f (TA)
parameter: VGS³ -10 V
BSO 612 CV
-2.2
A
-1.8
-1.6
2.0 -1.4
-1.2
1.6
-1.0
1.2 -0.8
0.8 -0.6
-0.4
0.4
-0.2
0.0
0
20 40 60 80 100 120 °C 160
TA
0.0
0
20 40 60 80 100 120 °C
160
TA
Page 5
2012-04-04
5 Page 
Rev. 2.1
Avalanche Energy EAS = f (Tj) (N-Ch.)
parameter: ID = 3 A, VDD = 25 V
RGS = 25 W
50
mJ
40
35
30
25
20
15
10
5
0
25 45 65 85 105 125 °C 165
Tj
Typ. gate charge (N-Ch.)
VGS = f (QGate)
parameter: ID = 3 A
BSO 612 CV
16
V
BSO 612 CV G
Avalanche Energy EAS = f (Tj)
parameter: ID = -2 A, VDD = -25 V
RGS = 25 W
80
mJ
60
50
40
30
20
10
0
25 45 65 85 105 125 °C 165
Tj
Typ. gate charge (P-Ch.)
VGS = f (QGate)
parameter: ID = -2 A
BSO 612 CV
-16
V
12
10
8
0,2 VDS max
6
4
2
0
024
-12
-10
0,8 VDS max
-8
-6 0,2 VDS max
-4
0,8 VDS max
-2
6
8 nC
12
QGate
0
0
2
4
6
8 10 12 14 16 nC 19
QGate
Page 11
2012-04-04
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet BSO612CVG.PDF ] | |
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