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IRLML2803GPBF の電気的特性と機能

IRLML2803GPBFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRLML2803GPBF
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRLML2803GPBF Datasheet, IRLML2803GPBF PDF,ピン配置, 機能
l Generation V Technology
l Ultra Low On-Resistance
l N-Channel MOSFET
l SOT-23 Footprint
l Low Profile (<1.1mm)
l Available in Tape and Reel
l Fast Switching
l Lead-Free
l Halogen-Free
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
A customized leadframe has been incorporated into the
standard SOT-23 package to produce a HEXFET Power
MOSFET with the industry's smallest footprint.This
package, dubbed the Micro3, is ideal for applications
where printed circuit board space is at a premium. The
low profile (<1.1mm) of the Micro3 allows it to fit easily into
extremely thin application environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
Power Dissipation
Linear Derating Factor
VGS
EAS
dv/dt
TJ ,TSTG
Gate-to-Source Voltage
gSingle Pulse Avalanche Energy
dPeak diode Recovery dv/dt
Junction and Storage Temperature Range
PD - 96164A
IRLML2803GPbF
HEXFET® Power MOSFET
G 1 VDSS = 30V
3D
S 2 RDS(on) = 0.25Ω
Micro3
Max.
1.2
0.93
7.3
540
4.3
±20
3.9
5.0
-55 to + 150
Units
A
mW
mW/°C
V
mJ
V/ns
°C
Thermal Resistance
Parameter
fRθJA Maximum Junction-to-Ambient
www.irf.com
Typ.
–––
Max.
230
Units
°C/W
1
12/13/11

1 Page





IRLML2803GPBF pdf, ピン配列
10 VGS
TOP
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
1
0.1
0.1
3.0V
20μs PULSE WIDTH
TJ = 25°C
A
1 10
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
TJ = 25°C
TJ= 150°C
1
0.1
3.0
V DS= 10V
20μs PULSE WIDTH
3.5 4.0 4.5 5.0 5.5 6.0 6.5A
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
IRLML2803GPbF
10 VGS
TOP
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
1
3.0V
0.1
0.1
20μs PULSE WIDTH
TJ = 150°C
A
1 10
V DS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0 ID = 0.91A
1.5
1.0
0.5
0.0
-60
VGS = 10V A
-40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRLML2803GPBF 電子部品, 半導体
IRLML2803GPbF
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01Ω
+
-
VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
18
16
ID
TOP 0.57A
14
0.75A
BOTTOM 0.90A
12
10
8
6
4
2
0
25
50 75 100 125
Starting TJ, Junction Temperature (°C)
150
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
+
‚
-

RG
D.U.T
+
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
ƒ Circuit Layout Considerations
Low Stray Inductance
-
Ground Plane
Low Leakage Inductance
Current Transformer
-„ +
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VDD
+
-
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple 5%
* VGS = 5V for Logic Level Devices
Fig 13. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
*VGS=10V
VDD
ISD
www.irf.com
6

6 Page



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共有リンク

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部品番号部品説明メーカ
IRLML2803GPBF

HEXFET Power MOSFET

International Rectifier
International Rectifier


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