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FQD4N60のメーカーはOucan Semiです、この部品の機能は「600V 4A N-Channel MOSFET」です。 |
部品番号 | FQD4N60 |
| |
部品説明 | 600V 4A N-Channel MOSFET | ||
メーカ | Oucan Semi | ||
ロゴ | |||
このページの下部にプレビューとFQD4N60ダウンロード(pdfファイル)リンクがあります。 Total 6 pages
FQD4N60/FQI4N60/FQU4N60
600V,4A N-Channel MOSFET
General Description
Product Summary
The FQD4N60 & FQI4N60 & FQU4N60 have been
fabricated using an advanced high voltage MOSFET
process that is designed to deliver high levels of
performance and robustness in popular AC-DC
applications.By providing low RDS(on), Ciss and Crss along
with guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested!
100% Rg Tested!
700V@150℃
4A
< 2.3Ω
TO252
DPAK
Top View
Bottom View
DD
Top View
TO251A
IPAK
Bottom View
TO251
Top View
Bottom View
D
S
G
G
S
S
D
G
G
D
S
S
D
G
AOD4N60
AOI4N60
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
CurrentB
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy H
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
PD
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TJ, TSTG
TL
AOU4N60
Maximum
600
±30
4
2.6
14
2.8
118
235
50
5
104
0.83
-50 to 150
300
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,G
Maximum Case-to-sink A
Maximum Junction-to-CaseD,F
Symbol
RθJA
RθCS
RθJC
Typical
43
-
1
Maximum
55
0.5
1.2
G
SD G
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Page 1 of 6
1 Page FQD4N60/FQI4N60/FQU4N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
8
10V
7
6
6.5V
5
4 6V
3
2 VGS=5.5V
1
0
0 5 10 15 20 25 30
VDS (Volts)
Fig 1: On-Region Characteristics
100
VDS=40V
10
125°C
1
-55°C
25°C
0.1
2468
VGS(Volts)
Figure 2: Transfer Characteristics
10
4.5 3
4.0
3.5
VGS=10V
3.0
2.5
2.0
1.5
2.5 VGS=10V
ID=2A
2
1.5
1
0.5
1.0
0 2 4 6 8 10
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
0
-100 -50 0 50 100 150
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
200
1.2 1.0E+02
ID=30A
1.1
1.0E+01
40
125°C
1.0E+00
1 125°
0.9
25°
1.0E-01
1.0E-02
1.0E-03
25°C
0.8
-100 -50 0 50 100 150 200
TJ (oC)
Figure 5: Break Down vs. Junction Temperature
1.0E-04
0.2 0.4 0.6 0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
Page 3 of 6
3Pages FQD4N60/FQI4N60/FQU4N60
+
VDC
-
Vgs
Ig
Gate Charge Test Circuit & Waveform
Vgs
+
VDC Vds
DUT -
10V
Qgs
Qg
Qgd
Vds
Vgs
Rg
Vgs
Res istive Switching Test Circuit & Waveforms
RL
Vds
DUT
+
VDC Vdd
-
Vgs
t d(on) t r
t on
t d(off)
tf
t off
Charge
90%
10%
Vds
Id
Vgs
Rg
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LI AR
Vds
Vgs +
VDC Vdd
- Id
DUT
Vgs
BVDSS
IAR
Vds +
Vds -
Isd
Vgs
Ig
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
DUT
Vgs
L
Isd IF
trr
dI/dt
+
VDC Vdd
IRM
- Vds
Vdd
Page 6 of 6
6 Page | |||
ページ | 合計 : 6 ページ | ||
|
PDF ダウンロード | [ FQD4N60 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
FQD4N60 | 600V 4A N-Channel MOSFET | Oucan Semi |