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Si2307CDSのメーカーはVishayです、この部品の機能は「P-Channel 30-V (D-S) MOSFET」です。 |
部品番号 | Si2307CDS |
| |
部品説明 | P-Channel 30-V (D-S) MOSFET | ||
メーカ | Vishay | ||
ロゴ | |||
このページの下部にプレビューとSi2307CDSダウンロード(pdfファイル)リンクがあります。 Total 9 pages
New Product
P-Channel 30-V (D-S) MOSFET
Si2307CDS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 30 0.088 at VGS = - 10 V
0.138 at VGS = - 4.5 V
TO-236
(SOT-23)
ID (A)a, b
- 2.7
- 2.2
Qg (Typ.)
4.1 nC
FEATURES
• Halogen-free Option Available
• TrenchFET® Power MOSFET
APPLICATIONS
• Load Switch for Portable Devices
RoHS
COMPLIANT
G1
S2
3D
Top View
Si2307CDS (N7)*
* Marking Code
Ordering Information: Si2307CDS-T1-E3 (Lead (Pb)-free)
Si2307CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)a, b
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current (10 µs Pulse Width)
IDM
Continuous Source-Drain Diode Currenta, b
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipationa, b
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)c
Limit
- 30
± 20
- 3.5
- 2.8
- 2.7a, b
- 2.2a, b
- 12
- 1.5
- 0.91a, b
1.8
1.14
1.1a, b
0.7a, b
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c
t≤5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Maximum under Steady State conditions is 166 °C/W.
Symbol
RthJA
RthJF
Typical
90
55
Maximum
115
70
Unit
°C/W
Document Number: 68768
S-81580-Rev. A, 07-Jul-08
www.vishay.com
1
1 Page New Product
Si2307CDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
12
VGS = 10 thru 6 V
10
8
VGS = 5 V
VGS = 4 V
2.0
1.5
6
4
2
0
0.0
0.20
VGS = 3 V
VGS = 2 V
0.5 1.0 1.5 2.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
1.0
0.5
0.0
1.0
600
TC = 25 °C
TC = 125 °C
TC = - 55 °C
1.5 2.0 2.5 3.0 3.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
4.0
0.15
0.10
0.05
VGS = 4.5 V
VGS = 10 V
0.00
0 3 6 9 12
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
ID = 2.5 A
8
6
4
VDS = 15 V
VDS = 7.5 V
VDS = 22.5 V
2
0
0246
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 68768
S-81580-Rev. A, 07-Jul-08
8
450
Ciss
300
150 Coss
Crss
0
0
6
12 18 24
VDS - Drain-to-Source Voltage (V)
Capacitance
30
1.8
ID = 3.2 A
1.6
VGS = 10 V
1.4
VGS = 4.5 V
1.2
1.0
0.8
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
www.vishay.com
3
3Pages SOT-23 (TO-236): 3-LEAD
b
Package Information
Vishay Siliconix
3
E1 E
12
S
A A2
A1
e
e1
D
0.10 mm C
0.004"
Seating Plane
C
C
q
L
L1
0.25 mm
Gauge Plane
Seating Plane
Dim
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
S
q
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479
MILLIMETERS
Min Max
0.89 1.12
0.01 0.10
0.88 1.02
0.35
0.085
2.80
2.10
0.50
0.18
3.04
2.64
1.20 1.40
0.95 BSC
1.90 BSC
0.40 0.60
0.64 Ref
0.50 Ref
3° 8°
Min
0.035
0.0004
0.0346
0.014
0.003
0.110
0.083
0.047
0.016
3°
INCHES
0.0374 Ref
0.0748 Ref
0.025 Ref
0.020 Ref
Max
0.044
0.004
0.040
0.020
0.007
0.120
0.104
0.055
0.024
8°
Document Number: 71196
09-Jul-01
www.vishay.com
1
6 Page | |||
ページ | 合計 : 9 ページ | ||
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部品番号 | 部品説明 | メーカ |
Si2307CDS | P-Channel 30-V (D-S) MOSFET | Vishay |