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PDF HMC-AUH249 Data sheet ( Hoja de datos )
| Número de pieza | HMC-AUH249 | |
| Descripción | GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER | |
| Fabricantes | Analog Devices | |
| Logotipo |  |
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v04.0909
HMC-AUH249
GaAs HEMT MMIC MODULATOR
DRIVER AMPLIFIER, DC - 35 GHz
4
4-1
Typical Applications
Features
This HMC-AUH249 is ideal for:
Small Signal Gain: 15 dB
• Fiber Optic Modulator Driver
Output Voltage: up to 8V pk-pk
• Gain Block for Test & Measurement Equipment
Psat Output Power: +23 dBm
• Point-to-Point/ Point-to-Multi-Point Radios
High Speed Performance: >35 GHz 3 dB Bandwidth
• Wideband Communication & Surveillance Systems
Supply Voltage: +5V @ 200 mA
• Radar Warning Systems
Small Die Size: 2.2 x 1.80 x 0.1 mm
• Military & Space
Functional Diagram
General Description
The HMC-AUH249 is a GaAs MMIC HEMT Distributed
Driver Amplifier die which operates between DC and
35 GHz and provides a typical 3 dB bandwidth of
37 GHz. The amplifier provides 15 dB of gain and
+23 dBm of saturated output power while requiring
only 200 mA from a +5V supply. The HMC-AUH249
exhibits very good gain and phase ripple beyond
25 GHz and can output greater than 8V peak-to-
peak, making it ideal for use in broadband wireless,
fiber optic communication and test equipment
applications. The amplifier die occupies less than
4 mm² which facilitates easy integration into Multi-
Chip-Modules (MCMs). The HMC-AUH249 requires
a bias-tee as well as off-chip blocking components
and bypass capacitors for the DC supply lines. Vgg1
adjusts the bias current for the device while Vgg2
adjusts the output gain.
Electrical Specifications [1], TA = +25 °C, Vdd = 5V, Vgg2 = 1.5V
Parameter
Min.
Typ.
Max.
Units
Gain
15 dB
Bandwidth (3 dB)
>35 GHz
Gain Variation
DC - 35 GHz
±1
dB
Group Delay Variation
DC - 25 GHz
±10
ps
Power Output at 1 dB Compression
DC - 5 GHz
21
dBm
Power Output at Saturation
DC - 5 GHz
23
dBm
Maximum Output Amplitude
8 Vpp
Input Return Loss
DC - 20 GHz
DC - 35 GHz
15
9
dB
dB
Output Return Loss
DC - 20 GHz
DC - 35 GHz
13
7
dB
dB
Power Dissipation
1W
Supply Current (Idd)
200 mA
[1] Unless otherwise indicated, all measurements are from die in a test fixture.
[2] Adjust Vgg1 between -1.0V to 0V to achieve Idd = 200 mA.
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Trademarks and registered trademarks areAthpepprloipceartytioof tnheSir ruesppepctoivreto:wPnehrso. ne: 978-250-
rpFOPOohonrorerdnapTeertei:iccro7eh8nO,n1,odn-32leo-2l0lgii9vnye-Ae4rWyl7p,aa0yha0t,naw•Pd.OROwtor.odwBaep.orldhaxoc,int9eCtl1iin0tohee6red.,acelNtmorwosms:rwwfAowonro.aaddlno,,agMMloADgAe.0cv20oic0m1e68s22,-94In10c.6,
3A3p4p3licaotironaSpupppso@rth: Pithtiotene.c: 1o-m800-ANALOG-D
1 page  
v04.0909
HMC-AUH249
GaAs HEMT MMIC MODULATOR
DRIVER AMPLIFIER, DC - 35 GHz
4
Pin Descriptions
Pin Number
1
Function
RFIN
Description
DC coupled. Blocking Cap is needed.
2 RES1
AC coupled 50Ω termination.
Gate control for amplifier. Please follow “MMIC Amplifier
3
Vgg2
Biasing Procedure” application note. See assembly for
required external components.
4
RFOUT & Vdd
RF output and DC bias (Vdd) for the output stage.
Gate control for amplifier. Please follow “MMIC Amplifier
6
Vgg1
Biasing Procedure” application note. See assembly for
required external components.
5 RES2
AC coupled 35Ω termination.
Interface Schematic
Die Bottom
GND
Application Circuit
Die Bottom must be connected to RF/DC ground.
4-5
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rliicgehntsseofisthgirrdanptaerdtiebsythimatpmlicaayPtiorehnsouolrtnofretohm:er9wits7isue8seu-.n2dS5epre0ca-infi3ycap3tiao4tne3sntsourbjpeFactteatnoxt cr:higa9hnt7gse8owf-Ai2thn5oaulo0tgn-oD3tiec3vei7.ceN3so.
Trademarks and registered trademarks areAthpepprloipceartytioof tnheSir ruesppepctoivreto:wPnehrso. ne: 978-250-
rpFOPOohonrorerdnapTeertei:iccro7eh8nO,n1,odn-32leo-2l0lgii9vnye-Ae4rWyl7p,aa0yha0t,naw•Pd.OROwtor.odwBaep.orldhaxoc,int9eCtl1iin0tohee6red.,acelNtmorwosms:rwwfAowonro.aaddlno,,agMMloADgAe.0cv20oic0m1e68s22,-94In10c.6,
3A3p4p3licaotironaSpupppso@rth: Pithtiotene.c: 1o-m800-ANALOG-D
5 Page | ||
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| PDF Descargar | [ Datasheet HMC-AUH249.PDF ] | |
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