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PDF HMC-ALH216 Data sheet ( Hoja de datos )
| Número de pieza | HMC-ALH216 | |
| Descripción | GaAs HEMT MMIC LOW NOISE AMPLIFIER | |
| Fabricantes | Analog Devices | |
| Logotipo |  |
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v03.0209
1
Typical Applications
This HMC-ALH216 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Military & Space
• Test Instrumentation
HMC-ALH216
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 14 - 27 GHz
Features
Noise Figure: 2.5 dB @ 20 GHz
Gain: 18 dB
P1dB Output Power: +14 dBm
Supply Voltage: +4V @ 90 mA
Die Size: 2.25 x 1.58 x 0.1 mm
Functional Diagram
General Description
The HMC-ALH216 is a GaAs MMIC HEMT Wideband
Low Noise Amplifier die which operates between 14
and 27 GHz. The amplifier provides 18 dB of gain,
2.5 dB noise figure and +14 dBm of output power at
1 dB gain compression while requiring only 90 mA
from a +4V supply voltage. The HMC-ALH216 amplifier
is ideal for integration into Multi-Chip-Modules
(MCMs) due to its small size.
Electrical Specifications*, TA = +25° C, Vdd= +4V
Parameter
Min.
Frequency Range
Gain
14
Gain Variation over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Supply Current (Idd) (Vdd = 4V, Vgg = -0.5 Typ.)
*Unless otherwise indicated, all measurements are from probed die
Typ.
14 - 27
18
0.02
2.7
15
15
90
Max.
4.5
Units
GHz
dB
dB / °C
dB
dB
dB
mA
1 - 126
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1 page  
1
Assembly Diagram
v03.0209
HMC-ALH216
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 14 - 27 GHz
Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier
Note 2: Best performance obtained from use of <10 mil (long) by 3 by 0.5mil ribbons on input and output
Note 3: Part can be biased from either side.
1 - 130
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5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HMC-ALH216.PDF ] | |
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