DataSheet.jp

HMC-ALH310 の電気的特性と機能

HMC-ALH310のメーカーはAnalog Devicesです、この部品の機能は「GaAs HEMT MMIC LOW NOISE AMPLIFIER」です。


製品の詳細 ( Datasheet PDF )

部品番号 HMC-ALH310
部品説明 GaAs HEMT MMIC LOW NOISE AMPLIFIER
メーカ Analog Devices
ロゴ Analog Devices ロゴ 




このページの下部にプレビューとHMC-ALH310ダウンロード(pdfファイル)リンクがあります。

Total 6 pages

No Preview Available !

HMC-ALH310 Datasheet, HMC-ALH310 PDF,ピン配置, 機能
v02.0209
1
Typical Applications
This HMC-ALH310 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Military & Space
Functional Diagram
HMC-ALH310
GaAs HEMT LOW NOISE
AMPLIFIER, 37 - 42 GHz
Features
Noise Figure: 3.5 dB
P1dB: +12 dBm
Gain: 22 dB
Supply Voltage: +2.5V
50 Ohm Matched Input/Output
Die Size: 1.80 x 0.73 x 0.1 mm
General Description
The HMC-ALH310 is a three stage GaAs HEMT MMIC
Low Noise Amplifier (LNA) which operates between
37 and 42 GHz. The HMC-ALH310 features 22 dB of
small signal gain, 3.5 dB of noise figure and an output
power of +12 dBm at 1dB compression from a +2.5V
supply voltage. All bond pads and the die backside
are Ti/Au metallized and the amplifier device is fully
passivated for reliable operation. This versatile LNA
is compatible with conventional die attach methods,
as well as thermocompression and thermosonic
wirebonding, making it ideal for MCM and hybrid
microcircuit applications. All data shown herein is
measured with the chip in a 50 Ohm environment and
contacted with RF probes.
Electrical Specifications, TA = +25° C, Vdd = 2.5V, Idd = 52 mA*
Parameter
Min. Typ.
Frequency Range
37 - 42
Gain
20 22
Noise Figure
3.5
Input Return Loss
4
Output Return Loss
8
Output Power for 1 dB Compression (P1dB)
12
Supply Current (Idd)(Vdd= 2.5V,Vgg= -0.3V Typ.)
52
*Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg between -1V to +0.3V (Typ. -0.2V) to achieve Iddtotal = 52 mA
Max.
4.5
Units
GHz
dB
dB
dB
dB
dBm
mA
1 - 138
IrrlTiniecgrfaseohpdntrseomsemnoasfatiisibtrohkingislrirtdayafunnpirsdtnaeairdrstesihegsbesuiyFsdmttheiomebar2edtyprdm0lbiAcptyaranayAAtardiorlnioeelncapmgsluoeoahlDrgtr,keofaDrsvtodheiamcevRreereicwistloetsiihssiveusaefseopdbeurr.nreoi,dtSlypiseepeC,vurreetsacyahdeinfo,niyecftnoadtoplhtmriaeboftientoerossrnraetasfscnouopOpcyrbeurljipcernardaatcfdirtvtct,eieentenoegMaotrecnwrmhdiognAOaeehrnrnrtedgssnt0ls.eiaoe-1obwflfr8liAieptnshn.a2oa,etHue4loptongawntsloDeetPotviecraewhveori,.cstohweNneesnoor.wec.:oFOPAh9nohpint7rotpetan8lipiTteccre-ei:ac2tc.7tecih5H8o,no1n0iod-tmS-3leto32iulgit9vp3eye-p4rWoMy73r,a0tiy:a0c,PnF•Prdhao.OoOxtwnor.d:eBa:ep9ov1rla7x-eo8c8n9e0Cl1-i0n02o-oe6rA5dr,aN0peNtAr-owosL3:rrwOw3aAwGo7tno.i-aao3dDlnon,agM:loADge.0cv2oic0me6s2,-9In10c.6,

1 Page





HMC-ALH310 pdf, ピン配列
v02.0209
1
Absolute Maximum Ratings
Drain Bias Voltage
Gate Bias Voltage
RF Input Power
Thermal Resistance
(channel to die bottom)
Storage Temperature
Operating Temperature
+5 Vdc
-1 to +0.3 Vdc
-5 dBm
137.8 °C/W
-65 to +150 °C
-55 to +85 °C
HMC-ALH310
GaAs HEMT LOW NOISE
AMPLIFIER, 37 - 42 GHz
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Die Packaging Information [1]
Standard
Alternate
GP-5 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE ±.002”
1 - 140
IrrlTiniecgrfaseohpdntrseomsemnoasfatiisibtrohkingislrirtdayafunnpirsdtnaeairdrstesihegsbesuiyFsdmttheiomebar2edtyprdm0lbiAcptyaranayAAtardiorlnioeelncapmgsluoeoahlDrgtr,keofaDrsvtodheiamcevRreereicwistloetsiihssiveusaefseopdbeurr.nreoi,dtSlypiseepeC,vurreetsacyahdeinfo,niyecftnoadtoplhtmriaeboftientoerossrnraetasfscnouopOpcyrbeurljipcernardaatcfdirtvtct,eieentenoegMaotrecnwrmhdiognAOaeehrnrnrtedgssnt0ls.eiaoe-1obwflfr8liAieptnshn.a2oa,etHue4loptongawntsloDeetPotviecraewhveori,.cstohweNneesnoor.wec.:oFOPAh9nohpint7rotpetan8lipiTteccre-ei:ac2tc.7tecih5H8o,no1n0iod-tmS-3leto32iulgit9vp3eye-p4rWoMy73r,a0tiy:a0c,PnF•Prdhao.OoOxtwnor.d:eBa:ep9ov1rla7x-eo8c8n9e0Cl1-i0n02o-oe6rA5dr,aN0peNtAr-owosL3:rrwOw3aAwGo7tno.i-aao3dDlnon,agM:loADge.0cv2oic0me6s2,-9In10c.6,


3Pages


HMC-ALH310 電子部品, 半導体
v02.0209
HMC-ALH310
GaAs HEMT LOW NOISE
AMPLIFIER, 37 - 42 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
0.102mm (0.004”) Thick GaAs MMIC
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accom-
plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
0.076mm
(0.003”)
Wire Bond
RF Ground Plane
Microstrip substrates should be placed as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Storage: All bare die are placed in either Waffle or Gel based ESD protec-
tive containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
0.076mm
(0.003”)
Wire Bond
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD
strikes.
Transients: Suppress instrument and bias supply transients while bias
is applied. Use shielded signal and bias cables to minimize inductive
pick-up.
RF Ground Plane
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded
with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended.
Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made
with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve
reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).
1
IrrlTiniecgrfaseohpdntrseomsemnoasfatiisibtrohkingislrirtdayafunnpirsdtnaeairdrstesihegsbesFuiysdmtthoeim2ebarerdtyp0dmlbipActyaranAayrAtadiiorlnlcoeenpamgseluoohalDrg,trakeofDrsdvtoheiamRceevrereicwilsotetisihvssaieuseefsdopbeurrr.neo,iydtSlpiseC,epevurreaetshcyadeinnfo,eiycftndoaltophmtriaebotftienoerossrnraeftasscopnOoupcyrbrelujiarpdcernadatcfic,rtvtteieeentenMogaotrecnwromAhdiOgnaerehnrndrtne0gsstls.eie-a1oolbwfr8iflAnsiept2hn.a,eoat4HuelpotonagwntlsoetPDeotvieawcrheveorsio,.ctwheeNnnesoorw.ec.:ohFOPA9niohpnt7troptea8inlptiTcece-rei:2atc.c7tc5eHih8o,on01niodtm--S3tle3oi2ultgi3e9vpye-4p4rWMoy37r,a0tiy:ac0F,Pnr•Pdhao.OoOxwtnor.:deaB:9epvo1rl7aex-o8c8n9e0C-l1i02n0oo-e56rArd,a0NpeNtA-rowos3Lr:rwOw3aAwG7otnio.o3-aadDlnno,ag:MloADge.0cv2oic0me6s2,-9In10c.6,
1 - 143

6 Page



ページ 合計 : 6 ページ
 
PDF
ダウンロード
[ HMC-ALH310 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
HMC-ALH310

GaAs HEMT MMIC LOW NOISE AMPLIFIER

Analog Devices
Analog Devices
HMC-ALH311

GaAs HEMT MMIC LOW NOISE DRIVER AMPLIFIER

Analog Devices
Analog Devices
HMC-ALH313

GaAs HEMT MMIC LOW NOISE AMPLIFIER

Hittite Microwave Corporation
Hittite Microwave Corporation


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap