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SP8M6FRA の電気的特性と機能

SP8M6FRAのメーカーはROHM Semiconductorです、この部品の機能は「MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 SP8M6FRA
部品説明 MOSFET ( Transistor )
メーカ ROHM Semiconductor
ロゴ ROHM Semiconductor ロゴ 




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SP8M6FRA Datasheet, SP8M6FRA PDF,ピン配置, 機能
Transistors
4V Drive Nch+Pch MOSFET
SP8M6 FRA
SP8MS6PF8RMA6
AEC-Q101 Qualified
zStructure
Silicon N-channel / P-channel MOSFET
zDimensions (Unit : mm)
SOP8
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
zApplication
Power switching, DC / DC converter.
Each lead has same dimensions
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
SP8M6FRA
Taping
TB
2500
zAbsolute maximum ratings (Ta=25qC)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Storage temperature
1 Pw10μs, Duty cycle1%
2 MOUNTED ON A CERAMIC BOARD.
Symbol
VDSS
VGSS
ID
IDP1
IS
ISP1
PD2
Tch
Tstg
zEquivalent circuit
(8) (7) (6) (5) (8) (7) (6) (5)
2 2
(1) (2) (3) (4)
1 1
(1) (2) (3) (4)
1 ESD PROTECTION DIODE
2 BODY DIODE
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Source
(4) Tr2 (Pch) Gate
(5) Tr2 (Pch) Drain
(6) Tr2 (Pch) Drain
(7) Tr1 (Nch) Drain
(8) Tr1 (Nch) Drain
A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
Limits
Nchannel Pchannel
30 30
±20 ±20
±5.0
±3.5
±20 ±14
1.6 1.6
20 14
2
150
55 to +150
Unit
V
V
A
A
A
A
W
°C
°C
zThermal resistance
Parameter
Channel to ambient
MOUNTED ON A CERAMIC BOARD.
Symbol
Rth (ch-a)
Limits
62.5
Unit
°C / W
Rev.C
1/5

1 Page





SP8M6FRA pdf, ピン配列
Transistors
P-ch
zElectrical characteristics (Ta=25qC)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS − − ±10 μA VGS= ±20V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 30 − − V ID= −1mA, VGS=0V
Zero gate voltage drain current IDSS − − −1 μA VDS= −30V, VGS=0V
Gate threshold voltage
VGS (th) 1.0 − −2.5 V VDS= −10V, ID= −1mA
Static drain-source on-state
resistance
RDS
(on)
65 90
ID= −3.5A, VGS= −10V
100 140 mΩ ID= −1.75A, VGS= −4.5V
120 165
ID= −1.75A, VGS= −4.0V
Forward transfer admittance
Yfs 1.8
S ID= −1.75A, VDS= −10V
Input capacitance
Ciss 490 pF VDS= −10V
Output capacitance
Coss
110
pF VGS=0V
Reverse transfer capacitance Crss
75 pF f=1MHz
Turn-on delay time
td (on) 10 ns ID= −1.75A, VDD 15V
Rise time
tr 15 ns VGS= −10V
Turn-off delay time
td (off) 35 ns RL=8.57Ω
Fall time
tf 10 ns RG=10Ω
Total gate charge
Qg 5.5 nC VDD 15V
Gate-source charge
Qgs 1.5 nC VGS= −5V
Gate-drain charge
Qgd 2.0 nC ID= −3.5A
Pulsed
zBody diode characteristics (Source-Drain) (Ta=25qC)
Parameter
Forward voltage
Symbol Min. Typ. Max. Unit
Conditions
VSD − − −1.2 V IS= −1.0A, VGS=0V
SP8MS6PF8RMA6
Rev.C
3/5


3Pages


SP8M6FRA 電子部品, 半導体
Notice
Precaution on using ROHM Products
1. If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1),
aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life,
bodily injury or serious damage to property (Specific Applications), please consult with the ROHM sales
representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any
ROHMs Products for Specific Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU CHINA
CLASS
CLASS
CLASS
CLASSb
CLASS
CLASS
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3. Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below.
Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the
use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our
Products under any special or extraordinary environments or conditions (as exemplified below), your independent
verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4. The Products are not subject to radiation-proof design.
5. Please verify and confirm characteristics of the final or mounted products in using the Products.
6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
the range that does not exceed the maximum junction temperature.
8. Confirm that operation temperature is within the specified range described in the product specification.
9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice-PAA-E
© 2015 ROHM Co., Ltd. All rights reserved.
Rev.003

6 Page



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部品番号部品説明メーカ
SP8M6FRA

MOSFET ( Transistor )

ROHM Semiconductor
ROHM Semiconductor


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