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SP8J5のメーカーはROHM Semiconductorです、この部品の機能は「4V Drive Pch+Pch MOS FET」です。 |
部品番号 | SP8J5 |
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部品説明 | 4V Drive Pch+Pch MOS FET | ||
メーカ | ROHM Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとSP8J5ダウンロード(pdfファイル)リンクがあります。 Total 5 pages
Transistors
4V Drive Pch+Pch MOS FET
SP8J5
SP8J5
zStructure
Silicon P-channel MOS FET
zFeatures
1) Low On-resistance. (25mΩ at 4.5V)
2) High Power Package. (PD=2.0W)
3) High speed switching.
4) Low voltage drive. (4V)
zApplications
Power switching, DC-DC converter
zExternal dimensions (Unit : mm)
SOP8
5.0
0.4
1.75
(8) (5)
1pin mark
(1)
1.27
(4)
0.2
Each lead has same dimensions
zPackaging specifications
Type
Package
Code
Basic ordering unit (pieces)
SP8J5
Taping
TB
2500
zInner circuit
(8) (7) (6)
(5)
∗2 ∗2
∗1 ∗1
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
PD ∗2
Tch
Tstg
(1) (2) (3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Limits
−30
±20
±7.0
±28
−1.6
−28
2.0
150
−55 to +150
Unit
V
V
A
A
A
A
W
°C
°C
(4)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board.
Symbol
Rth(ch-a) ∗
Limits
62.5
Unit
°C / W
Rev.A
1/4
1 Page Transistors
zElectrical characteristic curves
10
VDS= −10V
Pulsed
1 Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.1
0.01
1000
100 VGS= −4V
VGS= −4.5V
VGS= −10V
10
Ta=25°C
Pulsed
0.001
1.0 1.5 2.0 2.5 3.0
GATE-SOURCE VOLTAGE : −VGS (V)
Fig.1 Typical Transfer Characteristics
1
0.1 1 10
DRAIN CURRENT : −ID (A)
Fig.2 Static Drain-Source On-State
Resistance vs. Drain Current
SP8J5
100
VGS= −10V
Pulsed
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
1
0.1 1
10
DRAIN CURRENT : −ID (A)
Fig.3 Static Drain-Source On-State
Resistance vs. Drain Current
1000
100
VGS= −4.5V
Pulsed
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
100
VGS= −4V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
10
Ta=125°C
Ta=75°C
Ta=25°C
1 Ta= −25°C
0.1
VGS=0V
Pulsed
10
0.1 1 10
DRAIN CURRENT : −ID (A)
Fig.4 Static Drain-Source On-State
vs. Drain Current
10
0.1 1 10
DRAIN CURRENT : −ID (A)
Fig.5 Static Drain-Source On-State
vs. Drain Current
0.01
0.0 0.5 1.0 1.5
SOURCE-DRAIN VOLTAGE : −VSD (V)
Fig.6 Reverse Drain Current
Source-Drain Current
10000
1000
Ta=25°C
f=1MHz
VGS=0V
Ciss
Coss
Crss
100
0.01
0.1
1
10 100
DRAIN-SOURCE VOLTAGE : −VDS (V)
Fig.7 Typical Capacitance
vs. Drain-Source Voltage
10000
1000
100
tf
td (off)
10
Ta=25°C
VDD= −15V
VGS= −10V
RG=10Ω
Pulsed
td (on)
tr
1
0.01 0.1 1 10
DRAIN CURRENT : −ID (A)
Fig.8 Switching Characteristics
8
Ta=25°C
7 VDD= −15V
ID= −7A
6 RG=10Ω
Pulsed
5
4
3
2
1
0
0 5 10 15 20 25 30
TOTAL GATE CHARGE : Qg (nC)
Fig.9 Dynamic Input Characteristics
Rev.A
3/4
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部品番号 | 部品説明 | メーカ |
SP8J1 | Switching Transistors | ROHM Semiconductor |
SP8J2 | Switching Transistors | ROHM Semiconductor |
SP8J3 | 4V Drive Pch+Pch MOS FET | ROHM Semiconductor |
SP8J4 | Switching Transistors | ROHM Semiconductor |