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SP8J5FRA の電気的特性と機能

SP8J5FRAのメーカーはROHM Semiconductorです、この部品の機能は「4V Drive Pch+Pch MOS FET」です。


製品の詳細 ( Datasheet PDF )

部品番号 SP8J5FRA
部品説明 4V Drive Pch+Pch MOS FET
メーカ ROHM Semiconductor
ロゴ ROHM Semiconductor ロゴ 




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SP8J5FRA Datasheet, SP8J5FRA PDF,ピン配置, 機能
Transistors
4V Drive Pch+Pch MOS FET
SP8J5 FRA
SP8JS5PF8RJA5
AEC-Q101 Qualified
zStructure
Silicon P-channel MOS FET
zFeatures
1) Low On-resistance. (25m: at 4.5V)
2) High Power Package. (PD=2.0W)
3) High speed switching.
4) Low voltage drive. (4V)
zApplications
Power switching, DC-DC converter
zExternal dimensions (Unit : mm)
SOP8
5.0
0.4
1.75
(8) (5)
1pin mark
(1)
1.27
(4)
0.2
Each lead has same dimensions
zPackaging specifications
Type
Package
Code
Basic ordering unit (pieces)
SP8J5 FRA
Taping
TB
2500
zInner circuit
(8) (7) (6)
(5)
2 2
1 1
(1) (2) (3) (4)
zAbsolute maximum ratings (Ta=25qC)
<It is the same ratings for Tr1 and Tr2.>
1 ESD PROTECTION DIODE
2 BODY DIODE
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
1 Pw10μs, Duty cycle1%
2 Mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP 1
IS
ISP 1
PD 2
Tch
Tstg
Limits
30
±20
±7.0
±28
1.6
28
2.0
150
55 to +150
Unit
V
V
A
A
A
A
W
°C
°C
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
zThermal resistance
Parameter
Channel to ambient
Mounted on a ceramic board.
Symbol
Rth(ch-a)
Limits
62.5
Unit
°C / W
Rev.A
1/4

1 Page





SP8J5FRA pdf, ピン配列
Transistors
zElectrical characteristic curves
10
VDS= −10V
Pulsed
1 Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.1
0.01
1000
100 VGS= −4V
VGS= −4.5V
VGS= −10V
10
Ta=25°C
Pulsed
0.001
1.0 1.5 2.0 2.5 3.0
GATE-SOURCE VOLTAGE : VGS (V)
Fig.1 Typical Transfer Characteristics
1
0.1 1 10
DRAIN CURRENT : ID (A)
Fig.2 Static Drain-Source On-State
Resistance vs. Drain Current
SP8JS5PF8RJA5
100
VGS= −10V
Pulsed
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
1
0.1 1 10
DRAIN CURRENT : ID (A)
Fig.3 Static Drain-Source On-State
Resistance vs. Drain Current
1000
100
VGS= −4.5V
Pulsed
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
100
VGS= −4V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
10
Ta=125°C
Ta=75°C
Ta=25°C
1 Ta= −25°C
0.1
VGS=0V
Pulsed
10
0.1 1 10
DRAIN CURRENT : ID (A)
Fig.4 Static Drain-Source On-State
vs. Drain Current
10
0.1 1 10
DRAIN CURRENT : ID (A)
Fig.5 Static Drain-Source On-State
vs. Drain Current
0.01
0.0 0.5 1.0 1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.6 Reverse Drain Current
Source-Drain Current
10000
1000
Ta=25°C
f=1MHz
VGS=0V
Ciss
Coss
Crss
100
0.01
0.1
1
10 100
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.7 Typical Capacitance
vs. Drain-Source Voltage
10000
1000
100
tf
td (off)
10
Ta=25°C
VDD= −15V
VGS= −10V
RG=10Ω
Pulsed
td (on)
tr
1
0.01 0.1 1 10
DRAIN CURRENT : ID (A)
Fig.8 Switching Characteristics
8
Ta=25°C
7 VDD= −15V
ID= −7A
6 RG=10Ω
Pulsed
5
4
3
2
1
0
0 5 10 15 20 25 30
TOTAL GATE CHARGE : Qg (nC)
Fig.9 Dynamic Input Characteristics
Rev.A
3/4


3Pages


SP8J5FRA 電子部品, 半導体
Precautions Regarding Application Examples and External Circuits
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2. You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
A two-dimensional barcode printed on ROHM Products label is for ROHMs internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign
trade act, please consult with ROHM in case of export.
Precaution Regarding Intellectual Property Rights
1. All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data.
2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the
Products with other articles such as components, circuits, systems or external equipment (including software).
3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to
manufacture or sell products containing the Products, subject to the terms and conditions herein.
Other Precaution
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4. The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice-PAA-E
© 2015 ROHM Co., Ltd. All rights reserved.
Rev.003

6 Page



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部品番号部品説明メーカ
SP8J5FRA

4V Drive Pch+Pch MOS FET

ROHM Semiconductor
ROHM Semiconductor


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