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IRFS7540PbFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IRFS7540PbF |
| |
部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRFS7540PbFダウンロード(pdfファイル)リンクがあります。 Total 13 pages
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
D
G
S
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
GDS
TO-220AB
IRFB7540PbF
G
Gate
StrongIRFET™
IRFB7540PbF
IRFS7540PbF
IRFSL7540PbF
HEXFET® Power MOSFET
VDSS
RDS(on) typ.
max
ID
60V
4.2m
5.1m
110A
DD
S
G
D2Pak
IRFS7540PbF
D
Drain
S
GD
TO-262
IRFSL7540PbF
S
Source
Base part number
IRFB7540PbF
IRFSL7540PbF
IRFS7540PbF
Package Type
TO-220
TO-262
D2-Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
IRFB7540PbF
IRFSL7540PbF
IRFS7540PbF
IRFS7540TRLPbF
14
ID = 65A
12
10
TJ = 125°C
8
6
4
TJ = 25°C
2
4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1 www.irf.com © 2014 International Rectifier
120
100
80
60
40
20
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 2. Maximum Drain Current vs. Case Temperature
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November 6, 2014
1 Page IRFB/S/SL7540PbF
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff.(ER)
Coss eff.(TR)
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg – Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
(Energy Related)
Output Capacitance (Time Related)
Min.
110
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
88
22
28
60
12
76
58
56
4555
415
270
430
550
Max. Units
Conditions
––– S VDS = 10V, ID = 65A
130 ID = 65A
–––
–––
nC
VVDGSS
=
=
30V
10V
–––
––– VDD = 30V
–––
–––
ns
ID = 65A
RG= 2.7
––– VGS = 10V
––– VGS = 0V
––– VDS = 25V
––– pF ƒ = 1.0MHz, See Fig.7
––– VGS = 0V, VDS = 0V to 48V
––– VGS = 0V, VDS = 0V to 48V
Diode Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
–––
–––
Typ.
–––
–––
Max. Units
Conditions
110
430
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
G
D
S
VSD
dv/dt
trr
Qrr
IRRM
Diode Forward Voltage
Peak Diode Recovery dv/dt
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
––– ––– 1.2 V TJ = 25°C,IS = 65A,VGS = 0V
––– 11 ––– V/ns TJ = 175°C,IS = 65A,VDS = 60V
–––
–––
33
37
–––
–––
ns
TJ = 25°C
TJ = 125°C
VDD = 51V
IF = 65A,
–––
–––
36
47
–––
–––
nC
TJ = 25°C
TJ = 125°C
di/dt = 100A/µs
––– 1.9 ––– A TJ = 25°C
3 www.irf.com © 2014 International Rectifier
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November 6, 2014
3Pages 10
IRFB/S/SL7540PbF
1
D = 0.50
0.1
0.01
0.001
1E-006
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
1
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart = 25°C (Single Pulse)
10
1 Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
Fig 15. Avalanche Current vs. Pulse Width
200
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 65A
150
100
50
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1.Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
23a, 23b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 14)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
6 www.irf.com © 2014 International Rectifier
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November 6, 2014
6 Page | |||
ページ | 合計 : 13 ページ | ||
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部品番号 | 部品説明 | メーカ |
IRFS7540PbF | Power MOSFET ( Transistor ) | International Rectifier |