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PDF IRFI9Z34G Data sheet ( Hoja de datos )
| Número de pieza | IRFI9Z34G | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
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www.vishay.com
IRFI9Z34G, SiHFI9Z34G
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg max. (nC)
Qgs (nC)
Qgd (nC)
Configuration
-60
VGS = -10 V
34
9.9
16
Single
0.14
TO-220 FULLPAK
S
G
GDS
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Isolated package
• High voltage isolation = 2.5 kVRMS (t = 60 s;
f = 60 Hz)
Available
• Sink to lead creepage distance = 4.8 mm
• P-channel
Available
• 175 °C operating temperature
• Dynamic dV/dt rating
• Low thermal resistance
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional
insulating hardware in commercial-industrial applications.
The molding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
FULLPAK is mounted to a heatsink using a single clip or by
a single screw fixing.
TO-220 FULLPAK
IRFI9Z34GPbF
SiHFI9Z34G-E3
IRFI9Z34G
SiHFI9Z34G
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current a
Linear Derating Factor
VGS at -10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energy b
Repetitive Avalanche Current a
Repetitive Avalanche Energy a
Maximum Power Dissipation
Peak Diode Recovery dV/dt c
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature) d
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = -25 V, starting TJ = 25 °C, L = 3.0 mH, RG = 25 , IAS = -12 A (see fig. 12).
c. ISD -12 A, dI/dt 170 A/μs, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
LIMIT
-60
± 20
-12
-8.5
-48
0.28
370
-12
4.2
42
-4.5
-55 to +175
300
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
S16-0763-Rev. B, 02-May-16
1
Document Number: 91172
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
Fig. 9 - Maximum Drain Current vs. Case Temperature
IRFI9Z34G, SiHFI9Z34G
Vishay Siliconix
VDS
VGS
RG
RD
D.U.T.
- 10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
-
+VDD
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
Vary tp to obtain
required IAS
RG
- 10 V
tp
L
D.U.T
IAS
0.01 Ω
-
+
V
DD
Fig. 12a - Unclamped Inductive Test Circuit
IAS
VDS
VDD
tp
VDS
Fig. 12b - Unclamped Inductive Waveforms
S16-0763-Rev. B, 02-May-16
5
Document Number: 91172
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRFI9Z34G.PDF ] | |
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