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TC518129AFL-10LV の電気的特性と機能

TC518129AFL-10LVのメーカーはToshibaです、この部品の機能は「SILICON GATE CMOS PSEUDO STATIC RAM」です。


製品の詳細 ( Datasheet PDF )

部品番号 TC518129AFL-10LV
部品説明 SILICON GATE CMOS PSEUDO STATIC RAM
メーカ Toshiba
ロゴ Toshiba ロゴ 




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TC518129AFL-10LV Datasheet, TC518129AFL-10LV PDF,ピン配置, 機能
TOSHIBA
TC5I8I29APLIAFLIAFWL-80LVII0LVI I2LV
TC5I8I29AF1L-80LVII0LVI I2LV
SILICON GATE CMOS
131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM
Description
The TC518129A-LV is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A-LV
utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power
storage. The TC518129A-LV operates from a single power supply of 3.135V - 5.5V Refreshing is supported by a refresh (RFSro
input which enables two types of refreshing - auto refresh and self refresh. The TC518129A-LV features a static RAM-like interface
with a write cycle in which the input data is written into the memory cell at the rising edge of RIW thus simplifying the microproces-
sor interface.
A CS standby mode interface is incorporated in the TC518129A-LV family, with the CE2 pin in the TC518128A-LV family changed
to a CS pin. The TC518129A-LV is available in a 32-pin, 0.6 inch width plastic DIP, a small outline plastic flat package, and a 32-pin
thin small outline plastic package (forward type).
Features
• Organization:
131,072 words x 8 bits
• Low voltage operation:
3.135V - 5.5V
• Data retention supply voltage: 3.0V - 5.5V
• Fast access time
TC518129A-LV Family
-80 -10 -12
tCEA'CE Access Time
toEA OE Access Time
tRC Cycle Time
Power Dissipation
Is.sV
Self Refresh Current
1 3.0V
80ns
3Sns
130ns
38SmW
100ns
40ns
160ns
330mW
200~
100~
120ns
SOns
190ns
27SmW
• Auto refresh is supported by an intemal refresh address counter
• Self refresh is supported by an internal timer
• Inputs and outputs TIL compatible
• Refresh: 512 refresh cycles/8ms
• Auto refresh power down feature
• Package
- TC518129APL: DIP32-P-600
- TC518129AFL: SOP32-P-450
- TC518129AFWL: SOP32-P-525
- TC518129AFTL: TSOP32-P-0820
Pin Connection (Top View)
RFSH
A16
A14
Al2
A7
A6
AS
A4
A3
A2
Al
AO
1/01
1/02
1103
GND
Voo
AIS
CS
R/IN
All
A8
A9
Al'
OE
Al0
CE
1108
1107
1106
1/05
1104
res I 8129APL I AFL I AFWL
TCS18129AFTL ( Forward)
Pin Names
AO -A16
R!W
OE
RJ!SR
'CE
CS
1/01 - 1/08
Voo
GND
Address Inputs
Read/Write Control Input
Output Enable Input
Refresh Input
Chip Enable Input
Chip Select Input
Data InputslOutputs
Power
Ground
(TSOP)
PIN NO.
1
2
3 4S6 7 8
9 10 11 12 13 14 1S 16
PIN NAME A11 Ag As A13 R!W CS A15 Voo RJ!SR A16 A14 A12 A7 As A5 A4
PIN NO. 17 18 19 20 21 22 23 24 2S 26 27 28 29 30 31 32
PIN NAME A3 A2 A1 Ao 1/01 1/02 1/03 GND 1/04 I/OS 1/06 1/07 1/08 'CE A10 OE
TOSHIBA AMERICA ELECTRONIC COMPONENTS. INC.
0-101

1 Page





TC518129AFL-10LV pdf, ピン配列
Static RAM TC518129APUAFUAFWUAFTL-80LV/1 OLVl12LV
DC Recommended Operating Conditions
SYMBOL
PARAMETER
Voo Power Supply Voltage
VIH Input High Voltage
VIL Input Low Voltage
MIN. TYP. MAX. UNIT NOTES
4.5 5.0
5.5
V
2.4 - Voo + 1.0 V
-1.0 - 0.8 V
2
= =DC Characteristics (Ta 0 - 700C, Voo 5V±10%)
SYMBOL
PARAMETER
Operating Current (Average)
1000 'C"E', Address cycling: tRC = tRC min.
80ns version
1OOns version
120ns version
100S1
100S2
100F1
100F2
Standby Current
'C"E' = VIH ,'R'F'SH = V1H
Standby Current
'C"E' = Voo - 0.2V,
'R'F'SH = Voo - 0.2V
Self Refresh Current (Average)
'C"E' = VIH,
'R'F'SH = VIL
Self Refresh Current (Average)
'C"E' = Voo - 0.2V,
'R'F'SH = 0.2V
Auto Refresh Current (Average)
100F3 'R'F'SH cycling: tFC = tFC min
'C"E' only Refresh Current (Average)
100F4 'CE, Address cycling: tRC = tRC min.
80ns version
1OOns version
120ns version
Input Leakage Current
II(L) OV ~ VIN ~ Voo, All other Inputs not under test = OV
Output Leakage Current
10(L) Output Disabled ('C"E' = VIH or'OE' = VIH or RIW = Vld,
OV ~ Your ~ Voo
VOH
Output High Level
10H = -SmA
Output Low Level
VOL 10L= 4.2mA
MIN. TYP. MAX. UNIT NOTES
- 50 70
- 40 60 mA 3,4
- 35 50
- - 1 mA
- 100 200 !lA
- - 1 mA
- 100 200 !lA
- - 2 mA
- 50 70
- 40 60 mA
- 35 50
- - ±10 !lA
- - ±10 !lA
2.4 -
--
-V
0.4 V
3
= = =Capacitance* (Voo 5Y, Ta 25°C, f 1MHz)
SYMBOL
PARAMETER
CI1 Input Capacitance (AO ~ A16)
CI2 Input Capacitance ('CE, CS, 'OE', RIW, R"FSH)
CIO Input/Output Capacitance
*This parameter is periodically sampled and is not 100% tested.
MIN. MAX. UNIT
-5
- 7 pF
-7
TOSHIBA AMERICA ELECTRONIC COMPONENTS. INC.
0-103


3Pages


TC518129AFL-10LV 電子部品, 半導体
TC518129APUAFUAFWllAFTl·80lVI1 OlV112lV Static RAM
AC Characteristics (Ta =0 - 700C, Voo =3.3V±5%) (Notes: 5, 6, 8)
SYMBOL
PARAMETER
tRC
tRMW
tCE
tp
tCEA
toEA
tcLZ
tOLZ
tWLZ
tCHZ
tOHZ
tWHZ
toos
toOH
tRCS
tRCH
twp
tWCH
tCWL
tosw
tosc
tOHW
tOHC
tASC
tAHC
tRHC
tFC
tRFO
tFAP
tFP
tFAS
tFRS
tREF
tT
Random Read, Write Cycle Time
Read Modify Write Cycle lime
cr Pulse Width
cr Precharge Time
cr Access lime
OE" Access Time
cr to Output in Low -Z
OE" to Output in Low -Z
Output Active from End of Write
Chip Disable to Output in High-Z
OE" Disable to Output in High-Z
Write Enable to Output in High-Z
~ Output Disable Setup Time
~ Output Disable Hold Time
Read Command Setup Time
Read Command Hold Time
Write Pulse Width
Write Command Hold Time
crWrite Command to Lead Time
Data Setup lime from R/W
crData Setup lime from
Data Hold Time from R/W
crData Hold Time from
Address Setup Time
Address Hold lime
~ Command Hold Time
Auto Refresh Cycle lime
cr~ Delay lime from
fWSH Pulse Width (Auto Refresh)
'RFSH Precharge Time
fWSH Pulse Width (Self Refresh)
cr Delay lime from 'FWSR (Self Refresh)
Refresh Period (512 cycles, AO ~ AS)
Transition Time (Rise and Fall)
MIN.
300
405
200
90
-
-
40
5
5
0
0
0
0
10
0
0
100
100
100
50
50
0
0
0
35
15
300
90
50
50
8,000
300
-
3
MAX.
-
-
10,000
-
200
80
-
-
-
50
50
50
-
-
-
-
-
10,000
10,000
-
-
-
-
-
-
-
-
-
8,000
-
-
-
8
50
UNIT NOTES
-
-
-
-
-
-
-
-
-
-9
-9
-9
-
-
-
ns -
-
-
-
- 10
- 10
10
------,
- 10
- 11
11
I---
I---
I--
------,
12
r----
12
r-----
12
r---
12
ms
ns
Timing Reference Levels:
Input Reference Levels: 1.5V/1.5V
Output Reference Levels: 1.5V/1.5V
D·106
TDSHIBA AMERICA ELECTRONIC COMPDNENTSi INC.

6 Page



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部品番号部品説明メーカ
TC518129AFL-10LV

SILICON GATE CMOS PSEUDO STATIC RAM

Toshiba
Toshiba


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