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7NM80 の電気的特性と機能

7NM80のメーカーはUnisonic Technologiesです、この部品の機能は「N-CHANNEL POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 7NM80
部品説明 N-CHANNEL POWER MOSFET
メーカ Unisonic Technologies
ロゴ Unisonic Technologies ロゴ 




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7NM80 Datasheet, 7NM80 PDF,ピン配置, 機能
UNISONIC TECHNOLOGIES CO., LTD
7NM80
Preliminary
7.0A, 800V N-CHANNEL
SUPER-JUNCTION MOSFET
DESCRIPTION
The UTC 7NM80 is a Super Junction MOSFET Structure and is
designed to have better characteristics, such as fast switching time,
low gate charge, low on-state resistance and a high rugged
avalanche characteristics. This power MOSFET is usually used at
DC-DC, AC-DC converters for power applications.
FEATURES
* RDS(ON) < 0.94@ VGS = 10V, ID = 3.5A
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
7NM80L-TA3-T
7NM80G-TA3-T
TO-220
7NM80L-TF1-T
7NM80G-TF1-T
TO-220F1
7NM80L-TN3-T
7NM80G-TN3-T
TO-252
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
123
GDS
GDS
GDS
Packing
Tube
Tube
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
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7NM80 pdf, ピン配列
7NM80
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance
BVDSS
IDSS
IGSS
VGS=0V, ID=250µA
VDS=800V, VGS=0V
VDS=0V ,VGS=±30V
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
VGS = 10V, ID = 3.5A
800
2.5
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge (Note 1)
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time (Note 1)
Rise Time
Turn-OFF Delay Time
Fall-Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VDS=50V, VGS=10V, ID=1.3A ,
IG=100µA (Note 1, 2)
VDD=30V, VGS=10V, ID=0.5A,
RG=25(Note 1, 2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage (Note 1)
VSD IS =3.5A, VGS=0V
Body Diode Reverse Recovery Time (Note 1)
Body Diode Reverse Recovery Charge
trr IS =7.0A, VGS=0V,
Qrr dIF/dt=100A/μs
Notes: 1. Pulse Test : Pulse width 300μs, Duty cycle 2%.
2. Essentially independent of operating temperature.
TYP MAX UNIT
10
±100
V
µA
nA
4.5 V
0.94
620 pF
244 pF
18 pF
46 nC
5 nC
16 nC
56 ns
120 ns
272 ns
68 ns
7.0 A
28 A
1.4 V
450 ns
6 μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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7NM80 電子部品, 半導体
7NM80
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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部品番号部品説明メーカ
7NM80

N-CHANNEL POWER MOSFET

Unisonic Technologies
Unisonic Technologies


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