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8NM65-SH の電気的特性と機能

8NM65-SHのメーカーはUnisonic Technologiesです、この部品の機能は「N-CHANNEL POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 8NM65-SH
部品説明 N-CHANNEL POWER MOSFET
メーカ Unisonic Technologies
ロゴ Unisonic Technologies ロゴ 




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8NM65-SH Datasheet, 8NM65-SH PDF,ピン配置, 機能
UNISONIC TECHNOLOGIES CO., LTD
8NM65-SH
Preliminary
8A, 650V N-CHANNEL POWER
MOSFET
DESCRIPTION
The UTC 8NM65-SH is a high voltage super junction MOSFET
and is designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is usually
used at high speed switching applications in switching power
supplies and adaptors.
FEATURES
* RDS(ON) < 0.78@ VGS = 10V, ID = 4.0A
* Fast Switching Capability
* Avalanche Energy Tested
* Improved dv/dt Capability, High Ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Order Number
Lead Free
Halogen Free
8NM65L-TA3-T
8NM65G-TA3-T
8NM65L-TF1-T
8NM65G-TF1-T
8NM65L-TF2-T
8NM65G-TF2-T
8NM65L-TF3-T
8NM65G-TF3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F1
TO-220F2
TO-220F
Pin Assignment
123
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tube
Tube
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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8NM65-SH pdf, ピン配列
8NM65-SH
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS 650 V
Gate-Source Voltage
Avalanche Current (Note 2)
VGSS ±30 V
IAR 8.0 A
Drain Current
Continuous
Pulsed (Note 2)
ID
IDM
8.0 A
32 A
Avalanche Energy
Single Pulsed (Note 3)
Peak Diode Recovery dv/dt (Note 4)
EAS
dv/dt
270 mJ
4.5 V/ns
TO-220
130 W
Power Dissipation
TO-220F/TO-220F1
TO-220F2
TO-220
PD
48 W
1.04 W/°C
Derate above 25°C
TO-220F/TO-220F1
TO-220F2
0.384
W/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ.
3. L=150mH, IAS=1.6A, VDD=50V, RG=25 , Starting TJ = 25°C
4. ISD8A, di/dt200A/μs, VDD BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220
Junction to Case
TO-220F/TO-220F1
TO-220F2
SYMBOL
θJA
θJC
RATINGS
62.5
0.9
2.54
UNIT
°С/W
°С/W
°С/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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3Pages


8NM65-SH 電子部品, 半導体
8NM65-SH
Preliminary
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
VGS
RG
10V
Pulse Width1μs
Duty Factor0.1%
RL
D.U.T.
VDD
Switching Test Circuit
Power MOSFET
Switching Waveforms
Same
12V
50k
0.2µF
0.3µF
Type as
D.U.T.
VDS
VGS
3mA
DUT
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
VDD
ID(t)
tp
VDS(t)
Time
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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6 Page



ページ 合計 : 7 ページ
 
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共有リンク

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部品番号部品説明メーカ
8NM65-SH

N-CHANNEL POWER MOSFET

Unisonic Technologies
Unisonic Technologies


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