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UTC4N65 の電気的特性と機能

UTC4N65のメーカーはUnisonic Technologiesです、この部品の機能は「N-CHANNEL POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 UTC4N65
部品説明 N-CHANNEL POWER MOSFET
メーカ Unisonic Technologies
ロゴ Unisonic Technologies ロゴ 




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UTC4N65 Datasheet, UTC4N65 PDF,ピン配置, 機能
UNISONIC TECHNOLOGIES CO., LTD
4N65
4A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 4N65 is a high voltage power MOSFET
designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and
have a high rugged avalanche characteristic. This power
MOSFET is usually used in high speed switching applications
including power supplies, PWM motor controls, high efficient
DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) < 2.5@ VGS = 10 V, ID = 2.2A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
Power MOSFET
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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UTC4N65 pdf, ピン配列
4N65
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
650 V
Gate-Source Voltage
Avalanche Current (Note2)
VGSS
IAR
±30 V
4.4 A
Drain Current
Continuous
Pulsed (Note2)
ID
IDM
4.0 A
16 A
Avalanche Energy
Single Pulsed (Note3)
Repetitive (Note2)
EAS
EAR
260 mJ
10.6 mJ
Peak Diode Recovery dv/dt (Note4)
dv/dt
4.5 V/ns
TO-220/TO-262/TO-263
106 W
TO-220F/TO-220F1
TO-220F3
35 W
Power Dissipation
TO-220F2
TO-251/ TO-251S
PD
36 W
TO-251S2/TO-251S4
50 W
TO-252/TO-252D
DFN-8(5×6)
30 W
Junction Temperature
Operating Temperature
TJ
TOPR
+150
-55 ~ +150
°С
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L = 30mH, IAS = 4A, VDD = 50V, RG = 25 , Starting TJ = 25°C
4. ISD4.4A, di/dt 200A/μs, VDDBVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
PACKAGE
TO-220/TO-262/TO-263
TO-220F/TO-220F1
TO-220F2/TO-220F3
TO-251/ TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
DFN-8(5×6)
TO-220/TO-262/TO-263
TO-220F/TO-220F1
TO-220F3
TO-220F2
TO-251/ TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
DFN-8(5×6)
SYMBOL
θJA
θJC
RATINGS
62.5
110
75
1.18
3.5
3.4
2.5
4.17
UNIT
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-397.N


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UTC4N65 電子部品, 半導体
4N65
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
RL
VGS
RG
VDD
10V
Pulse Width1μs
Duty Factor0.1%
D.U.T.
Switching Test Circuit
Power MOSFET
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
BVDSS
IAS
VDD
ID(t)
VDS(t)
tp Time
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-397.N

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ページ 合計 : 9 ページ
 
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共有リンク

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部品番号部品説明メーカ
UTC4N65

N-CHANNEL POWER MOSFET

Unisonic Technologies
Unisonic Technologies


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