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IXXH110N65C4 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXXH110N65C4
部品説明 IGBT
メーカ IXYS
ロゴ IXYS ロゴ 



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IXXH110N65C4 Datasheet, IXXH110N65C4 PDF,ピン配置, 機能
XPTTM 650V IGBT
GenX4TM
Extreme Light Punch Through
IGBT for 20-60 kHz Switching
IXXH110N65C4
VCES = 650V
IC110 = 110A
VCE(sat)  2.35V
tfi(typ) = 30ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
ILRMS
IC110
ICM
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
TC = 25°C (Chip Capability)
Terminal Current Limit
TC = 110°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 150°C, RG = 2
Clamped Inductive Load
VGE = 15V, VCE = 360V, TJ = 150°C
RG = 10, Non Repetitive
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Maximum Ratings
650 V
650 V
±20 V
±30 V
234 A
160 A
110 A
600 A
ICM = 220
@VCE VCES
10
A
μs
880
-55 ... +175
175
-55 ... +175
300
260
1.13/10
6
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 4mA, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC
=
110A,
VGE
=
15V,
Note
1
TJ
=
150C
Characteristic Values
Min. Typ. Max.
650 V
4.0 6.5 V
25 A
2 mA
100 nA
1.98
2.34
2.35 V
V
TO-247 AD
G
CE
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
Optimized for 20-60kHz Switching
Square RBSOA
Avalanche Capability
Short Circuit Capability
International Standard Package
Advantages
High Power Density
175°C Rated
Extremely Rugged
Low Gate Drive Requirement
Applications
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
High Frequency Power Inverters
© 2015 IXYS CORPORATION, All Rights Reserved
DS100497B(01/15)

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