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IXXH100N60C3 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXXH100N60C3
部品説明 IGBT
メーカ IXYS
ロゴ IXYS ロゴ 



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IXXH100N60C3 Datasheet, IXXH100N60C3 PDF,ピン配置, 機能
Advance Technical Information
XPTTM 600V
GenX3TM
Extreme Light Punch Through
IGBT for 20-60kHz Switching
IXXH100N60C3
VCES =
IC110 =
V CE(sat)
tfi(typ) =
600V
100A
2.20V
75ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
ILRMS
IC110
ICM
IA
EAS
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1MΩ
Continuous
Transient
TC= 25°C ( Chip Capability )
Terminal Current Limit
TC = 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 2Ω
Clamped Inductive Load
VGE = 15V, VCE = 360V, TJ = 150°C
RG = 10Ω, Non Repetitive
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Maximum Ratings
600
600
±20
±30
V
V
V
V
190 A
160 A
100 A
380 A
50 A
600 mJ
ICM = 200
@VCE VCES
10
A
μs
830
-55 ... +175
175
-55 ... +175
300
260
1.13/10
6
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC
=
70A,
VGE
=
15V,
Note
1
TJ
=
150°C
Characteristic Values
Min. Typ. Max.
600 V
3.0 5.5 V
25 μA
2 mA
±100 nA
1.68
1.97
2.20 V
V
TO-247 AD
G
CE
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
z Optimized for 20-60kHz Switching
z Square RBSOA
z Avalanche Rated
z Short Circuit Capability
z High Current Handling Capability
z International Standard Package
Advantages
z High Power Density
z Low Gate Drive Requirement
Applications
z Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
© 2010 IXYS CORPORATION, All Rights Reserved
DS100282(12/10)

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