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IXXH100N60B3 の電気的特性と機能

IXXH100N60B3のメーカーはIXYSです、この部品の機能は「IGBT ( Insulated Gate Bipolar Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXXH100N60B3
部品説明 IGBT ( Insulated Gate Bipolar Transistor )
メーカ IXYS
ロゴ IXYS ロゴ 




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IXXH100N60B3 Datasheet, IXXH100N60B3 PDF,ピン配置, 機能
XPTTM 600V IGBT
GenX3TM
IXXH100N60B3
Extreme Light Punch Through
IGBT for 10-30 kHz Switching
VCES =
IC110 =
V CE(sat)
tfi(typ) =
600V
100A
1.80V
150ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
ILRMS
IC110
ICM
IA
EAS
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C (Chip Capability)
Terminal Current Limit
TC = 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 2Ω
Clamped Inductive Load
VGE = 15V, VCE = 360V, TJ = 150°C
RG = 10Ω, Non Repetitive
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Maximum Ratings
600
600
±20
±30
V
V
V
V
220 A
160 A
100 A
480 A
50 A
600 mJ
ICM = 200
@ VCES
10
A
μs
830
-55 ... +175
175
-55 ... +175
300
260
1.13/10
6
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC
=
70A,
VGE
=
15V,
Note
1
TJ
=
150°C
Characteristic Values
Min. Typ. Max.
600 V
3.0 5.5 V
25 μA
2 mA
±100 nA
1.50
1.77
1.80 V
V
TO-247 AD
G
CE
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
z Optimized for 10-30kHz Switching
z Square RBSOA
z Avalanche Rated
z Short Circuit Capability
z High Current Handling Capability
z International Standard Package
Advantages
z High Power Density
z Low Gate Drive Requirement
Applications
z Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
© 2013 IXYS CORPORATION, All Rights Reserved
DS100284B(02/13)

1 Page





IXXH100N60B3 pdf, ピン配列
IXXH100N60B3
140
120
100
80
60
40
20
0
0
Fig. 1. Output Characteristics @ TJ = 25ºC
VGE = 15V
13V
12V
11V
10V
9V
8V
7V
6V
0.4 0.8 1.2 1.6 2 2.4 2.8
VCE - Volts
140
120
100
80
60
40
20
0
0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
8
Fig. 3. Output Characteristics @ TJ = 150ºC
VGE = 15V
13V
12V
11V
10V
9V
8V
7V
5V
0.5 1 1.5 2 2.5 3 3.5
VCE - Volts
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
TJ = 25ºC
I C = 140A
70A
35A
9 10 11 12 13 14 15
VGE - Volts
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
350
VGE = 15V 14V
300 13V
250 12V
200
11V
150
100 10V
9V
50
8V
7V
0
0 2 4 6 8 10 12 14 16 18 20
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
1.8
VGE = 15V
1.6
I C = 140A
1.4
1.2
I C = 70A
1.0
0.8
I C = 35A
0.6
-50 -25 0 25 50 75 100 125 150 175
TJ - Degrees Centigrade
Fig. 6. Input Admittance
180
160
140
120 TJ = 150ºC
100
25ºC
- 40ºC
80
60
40
20
0
4 5 6 7 8 9 10 11
VGE - Volts
© 2013 IXYS CORPORATION, All Rights Reserved


3Pages


IXXH100N60B3 電子部品, 半導体
Fig. 19. Inductive Turn-on Switching Times vs.
Gate Resistance
180 84
160
t r i td(on) - - - -
TJ = 150ºC, VGE = 15V
140 VCE = 360V
76
68
120
I C = 100A
60
100 52
80
I C = 50A
44
60 36
40 28
20 20
2 3 4 5 6 7 8 9 10 11 12 13 14 15
RG - Ohms
Fig. 21. Inductive Turn-on Switching Times vs.
Junction Temperature
180 37
160 t r i
td(on) - - - -
RG = 2, VGE = 15V
140 VCE = 360V
36
35
120 34
100 I C = 100A 33
80 32
60
I C = 50A
40
31
30
20 29
0 28
25 50 75 100 125 150
TJ - Degrees Centigrade
IXXH100N60B3
Fig. 20. Inductive Turn-on Switching Times vs.
Collector Current
140
t r i td(on) - - - -
120 RG = 2, VGE = 15V
VCE = 360V
100
38
36
34
80 TJ = 150ºC, 25ºC
60
32
30
40 28
20 26
0 24
20 30 40 50 60 70 80 90 100
IC - Amperes
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: IXX_100N60B3(7D)12-01-11B

6 Page



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部品番号部品説明メーカ
IXXH100N60B3

IGBT ( Insulated Gate Bipolar Transistor )

IXYS
IXYS


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