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P0703EK の電気的特性と機能

P0703EKのメーカーはNIKO-SEMです、この部品の機能は「P-Channel Field Effect Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 P0703EK
部品説明 P-Channel Field Effect Transistor
メーカ NIKO-SEM
ロゴ NIKO-SEM ロゴ 




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P0703EK Datasheet, P0703EK PDF,ピン配置, 機能
NIKO-SEM
P-Channel Logic Level Enhancement
P0703EK
Mode Field Effect Transistor
NPAK SOP-8
(Preliminary)
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
7.5mΩ
ID
- 30A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C (Package Limited)
TC = 25 °C (Silicon Limited)
TC = 100 °C
Continuous Drain Current
Avalanche Current
TA = 25 °C
TA = 70 °C
Avalanche Energy
L = 0.1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
ID
IAS
EAS
PD
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RθJA
Junction-to-Case
RθJC
1Pulse width limited by maximum junction temperature.
TYPICAL
D DDD
#1 S S S G
1. GATE
2. DRAIN
3. SOURCE
LIMITS
30
±25
-30
-72
-45
-120
-14
-11
-70
249
62.5
25
2.5
1.6
-55 to 150
UNITS
V
V
A
mJ
W
W
°C
MAXIMUM
50
2
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V(BR)DSS
VGS(th)
STATIC
VGS = 0V, ID = -250µA
VDS = VGS, ID = -250µA
REV 0.9
1
LIMITS
UNIT
MIN TYP MAX
-30
-1 -1.7
-3
V
Mar-02-2010

1 Page





P0703EK pdf, ピン配列
NIKO-SEM
P-Channel Logic Level Enhancement
P0703EK
Mode Field Effect Transistor
NPAK SOP-8
(Preliminary)
Halogen-Free & Lead-Free
Output Characteristics
40
35 VGS=-10V
VGS= -9V
VGS= -8V
30 VGS= -7V
VGS= -6V
25 VGS= -5V
VGS= -4.5V
20
VGS =4V
15
VGS =3V
10
5
0
01 23 45
-VDS, Drain-To-Source Voltage(V)
On-Resistance VS Gate-To-Source
250
200
150
ID= -25A
100
50
0
0 2 4 6 8 10
-VGS, Gate-To-Source Voltage(V)
Transfer Characteristics
40
30
20
10
0
0
REV 0.9
125
25
-20
12 34
-VGS, Gate-To-Source Voltage(V)
5
On-Resistance VS Drain Current
0.08
0.07
0.06
0.05
0.04
0.03
0.02
VGS = -4.5V
0.01
VGS = -10V
0
0
10
20 30
40
-ID , Drain-To-Source Current
On-Resistance VS Temperature
RDS(ON) 2.0
50
RDS(ON) 1.8
RDS(ON) 1.6
RDS(ON) 1.4
RDS(ON) 1.2
RDS(ON) 1.0
RDS(ON) 0.8
RDS(ON)
RDS(ON)
0.6 VGS=-10V
ID=-25A
0.4
-50 -25 0 25 50 75 100 125 150
TJ , Junction Temperature(˚C)
Gate charge Characteristics
10
Characteristics
8
ID= -25A
VDS= -15V
6
4
2
0
0
3
30 60 90
Qg , Total Gate Charge(C)
120
Mar-02-2010


3Pages





ページ 合計 : 5 ページ
 
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共有リンク

Link :


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