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P1003BKAのメーカーはNIKO-SEMです、この部品の機能は「N-Channel Field Effect Transistor」です。 |
部品番号 | P1003BKA |
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部品説明 | N-Channel Field Effect Transistor | ||
メーカ | NIKO-SEM | ||
ロゴ | |||
このページの下部にプレビューとP1003BKAダウンロード(pdfファイル)リンクがあります。 Total 4 pages
NIKO-SEM
N-Channel Enhancement Mode
P1003BKA
Field Effect Transistor
PDFN 5x6P
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 9.8mΩ
ID
44A
D
G
S
D DDD
#1 S S S G
G. GATE
D. DRAIN
S. SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Continuous Drain Current
TA = 25 °C
TA = 70 °C
Power Dissipation
TC = 25 °C
TC = 100 °C
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
ID
PD
PD
Tj, Tstg
LIMITS
30
±20
44
28
110
12
10
31
12
2.5
1.6
-55 to 150
UNITS
V
V
A
W
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
Steady-State
RθJA
Junction-to-Case
Steady-State
RθJC
1Pulse width limited by maximum junction temperature.
2Package limitation current is 30A
TYPICAL
MAXIMUM
50
4
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
STATIC
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 55 °C
LIMITS
MIN TYP MAX
UNIT
30
1 1.5
3
V
±100 nA
1
µA
10
REV 0.9
Apr-12-2011
1
1 Page NIKO-SEM
N-Channel Enhancement Mode
P1003BKA
Field Effect Transistor
PDFN 5x6P
Halogen-Free & Lead-Free
Output Characteristics
48
Transfer Characteristics
48
40 VGS=3.5V
VGS=10V
32 VGS=9V
VGS=8V
VGS=7V
VGS=6V
24 VGS=5V
VGS=4.5V
16
VGS=3V
8
40
32
24
25℃
16
125℃
8 -20℃
0
012345
VDS, Drain-To-Source Voltage(V)
On-Resistance VS Temperature
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
10
VGS=10V
ID=20A
-25 0 25 50 75 100 125 150
TJ , Junction Temperature(˚C)
Gate charge Characteristics
Characteristics
VDS=15V
8 ID =20A
0
01234
VGS, Gate-To-Source Voltage(V)
Capacitance Characteristic
1400
5
1200
1000
CISS
800
600
400
200
0
0
COSS
CRSS
5 10 15 20 25 30
VDS, Drain-To-Source Voltage(V)
Source-Drain Diode Forward Voltage
100
6 10
4
150℃
25℃
1
2
0
0 5 10 15 20 25
Qg , Total Gate Charge(nC)
0.1
0.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, Source-To-Drain Voltage(V)
REV 0.9
Apr-12-2011
3
3Pages | |||
ページ | 合計 : 4 ページ | ||
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PDF ダウンロード | [ P1003BKA データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
P1003BK | N-Channel Enhancement Mode MOSFET | UNIKC |
P1003BKA | N-Channel Field Effect Transistor | NIKO-SEM |