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P1403EV8 の電気的特性と機能

P1403EV8のメーカーはNIKO-SEMです、この部品の機能は「P-Channel Field Effect Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 P1403EV8
部品説明 P-Channel Field Effect Transistor
メーカ NIKO-SEM
ロゴ NIKO-SEM ロゴ 




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P1403EV8 Datasheet, P1403EV8 PDF,ピン配置, 機能
NIKO-SEM P-Channel Logic Level Enhancement Mode P1403EV8
Field Effect Transistor
SOP-8
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30 14mΩ
ID
-12
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
4 :GATE
5,6,7,8 :DRAIN
1,2,3 :SOURCE
100% UIS tested
LIMITS
-30
±25
-12
-10
-65
-39
89
3
2
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Case
RθJc
25 °C / W
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
40 °C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
VGS = 0V, ID = -250µA
VDS = VGS, ID = -250µA
VDS = 0V, VGS = ±25V
VDS = -24V, VGS = 0V
VDS = -20V, VGS = 0V, TJ = 125 °C
VGS = -4.5V, ID = -9A
VGS = -10V, ID = -12A
-30
-1 -1.5
-3
V
±100 nA
-1
µA
-10
17.8 22
mΩ
11.3 14
REV 1.0
Jan-29-2010
1

1 Page





P1403EV8 pdf, ピン配列
NIKO-SEM P-Channel Logic Level Enhancement Mode P1403EV8
Field Effect Transistor
SOP-8
Halogen-Free & Lead-Free
Output Characteristics
60
VGS = 10V
VGS = 5V
50
VGS = 7V
VGS = 4.5V
40
30
20
10
VGS = 3V
0 0.5 1 1.5 2
-VDS, Drain-To-Source Voltage(V)
2.5
On-Resistance VS Gate-To-Source
0.05
0.04
0.03
0.02
0.01
ID = -12A
0
0 2 4 6 8 10
-VGS, Gate-To-Source Voltage(V)
Transfer Characteristics
60
50
40
30
Tj=125° C
20
Tj=25° C
10 Tj=-20°C
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
-VGS, Gate-To-Source Voltage(V)
4.5
On-Resistance VS Drain Current
0.024
0.021
0.018
0.015
VGS = 4.5V
0.012
0.009
VGS = 10V
0.006
0.003
0
0
10
20 30
40 50
-ID , Drain-To-Source Current
On-Resistance VS Drain Current
RDS(ON) x 1.8
RDS(ON) x 1.6
RDS(ON) x 1.4
RDS(ON) x 1.2
RDS(ON) x 1.0
RDS(ON) x 0.8
VGS= 10V
RDS(ON) x 0.6
ID= -12A
- 50 - 25 0 25 50 75 100 125 150
TJ , Junction Temperature(˚C)
Gate Charge
10
ID = -12A
VDS = -15V
8
6
4
2
0
0 7 14 21 28 35 42
Qg , Total Gate Charge
REV 1.0
Jan-29-2010
3


3Pages





ページ 合計 : 4 ページ
 
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[ P1403EV8 データシート.PDF ]


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共有リンク

Link :


部品番号部品説明メーカ
P1403EV8

P-Channel Enhancement Mode MOSFET

UNIKC
UNIKC
P1403EV8

P-Channel Field Effect Transistor

NIKO-SEM
NIKO-SEM
P1403EVG

P-Channel Logic Level Enhancement Mode Field Effect Transistor

NIKO-SEM
NIKO-SEM


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