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PK502BA の電気的特性と機能

PK502BAのメーカーはNIKO-SEMです、この部品の機能は「N-Channel Field Effect Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 PK502BA
部品説明 N-Channel Field Effect Transistor
メーカ NIKO-SEM
ロゴ NIKO-SEM ロゴ 




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PK502BA Datasheet, PK502BA PDF,ピン配置, 機能
NIKO-SEM
N-Channel Enhancement Mode
PK502BA
Field Effect Transistor
PDFN 5x6P
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 10.5mΩ
ID2
41A
D
G
S
D D DD
#1 S S S G
G. GATE
D. DRAIN
S. SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Continuous Drain Current
TA = 25 °C
TA = 70 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
ID
IAS
EAS
PD
PD
Tj, Tstg
LIMITS
30
±20
41
26
120
10
8
24
28
31
12
2
1.3
-55 to 150
UNITS
V
V
A
mJ
W
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Ambient3
Junction-to-Case
RJA
RJC
60
°C / W
4
1Pulse width limited by maximum junction temperature.
2Package limitation current is 30A
3The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V(BR)DSS
VGS(th)
STATIC
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
REV 0.9
1
LIMITS
MIN TYP MAX
UNIT
30
1.3 1.6
3
V
Jan-30-2012

1 Page





PK502BA pdf, ピン配列
NIKO-SEM
N-Channel Enhancement Mode
PK502BA
Field Effect Transistor
PDFN 5x6P
Halogen-Free & Lead-Free
Output Characteristics
40 VGS=10V
VGS=9V
VGS=8V
VGS=7V
32 VGS=6V
VGS=5V
VGS=4.5V
VGS=3.5V
24
Transfer Characteristics
40
32
24
16
VGS=3V
8
0
012345
VDS, Drain-To-Source Voltage(V)
On-Resistance VS Temperature
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
VGS=10V
ID=20A
-25 0
25 50 75 100 125
TJ , Junction Temperature(˚C)
150
Gate charge Characteristics
10
VDS=15V
ID=20A
8
6
4
2
16
25
8
125
-20
0
01234
VGS, Gate-To-Source Voltage(V)
Capacitance Characteristic
800
5
700
600 CISS
500
400
300
200
100
0
0
COSS
CRSS
5 10 15 20 25 30
VDS, Drain-To-Source Voltage(V)
Source-Drain Diode Forward Voltage
100
10
150
25
1
0
0 3 6 9 12
Qg , Total Gate Charge(nC)
15
0.1
0.0
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-To-Drain Voltage(V)
1.4
REV 0.9
Jan-30-2012
3


3Pages





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[ PK502BA データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

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部品番号部品説明メーカ
PK502BA

N-Channel Field Effect Transistor

NIKO-SEM
NIKO-SEM


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