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PDF RSJ550N10 Data sheet ( Hoja de datos )
| Número de pieza | RSJ550N10 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | ROHM Semiconductor | |
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4V Drive Nch MOSFET
RSJ550N10
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) High Power Package.
3) 4V drive.
Data Sheet
Dimensions (Unit : mm)
LPTS
10.1 4.5 1.3
1.24
2.54 0.78
5.08
(1) (2) (3)
0.4
2.7
Application
Switching
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RSJ550N10
Taping
TL
1000
Inner circuit
∗1
∗2
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
VGSS
ID *3
IDP *1
IS *3
ISP *1
PD *2
Tch
Tstg
100
20
55
110
55
110
100
150
55 to 150
*1 PW10s, Duty cycle1%
*2 TC=25°C
*3 Please use within the range of SOA.
Unit
V
V
A
A
A
A
W
C
C
Thermal resistance
Parameter
Channel to Case
* TC=25°C
Symbol
Rth (ch-c)*
Limits
1.25
Unit
C / W
(1) Gate
(2) Drain
(3) Source
(1) (2) (3)
1 ESD PROTECTION DIODE
2 BODY DIODE
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.06 - Rev.A
1 page  
RSJ550N10
1000
100
Fig.13 Maximum Safe Operating Area
Operation in this area is limited by RDS(on)
(VGS = 10V)
10
PW = 300ms
1 PW = 1ms
0.1 Ta=25°C
Single Pulse
Mounted on epoxy board.
(25mm × 27mm × 0.8mm)
0.01
0.1 1 10
PW = 10ms
PW = 1s
100 1000
Drain-Source Voltage : VDS [ V ]
Data Sheet
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
5/6
2011.06 - Rev.A
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet RSJ550N10.PDF ] | |
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