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Número de pieza | RSJ250P10 | |
Descripción | MOSFET ( Transistor ) | |
Fabricantes | ROHM Semiconductor | |
Logotipo | ||
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No Preview Available ! Data Sheet
4V Drive Pch MOSFET
RSJ250P10
Structure
Silicon P-channel MOSFET
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
Application
Switching
Dimensions (Unit : mm)
LPTS
10.1 4.5 1.3
1.24
2.54 0.78
5.08
(1) (2) (3)
0.4
2.7
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RSJ250P10
Taping
TL
1000
○
Inner circuit
∗1
∗2
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Power dissipation
Channel temperature
Continuous
Pulsed
Continuous
Pulsed
VDSS
VGSS
ID
IDP
IS
ISP
PD
Tch
*1
*2
*1
*2
*3
100
20
25
50
25
50
50
150
Range of storage temperature
Tstg 55 to 150
*1 Limited only by maximum temperature allowed.
*2 PW≤10s, Duty cycle≤1%
*3 TC=25°C
Unit
V
V
A
A
A
A
W
C
C
Thermal resistance
Parameter
Channel to Ambient
* TC=25°C
Symbol
Limits
Rth (ch-c)* 2.5
Unit
C / W
(1) Gate
(2) Drain
(3) Source
(1) (2) (3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
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© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.06 - Rev.A
1 page RSJ250P10
Data Sheet
100000
10000
1000
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
Ciss
Coss
100
Ta=25°C
Crss
f=1MHz
VGS=0V
10
0.01
0.1
1
10 100
DRAIN-SOURCE VOLTAGE : -VDS[V]
1000
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
10
1
0.1
0.01
0.001
0.0001
0.0001 0.001
Ta = 25°C
Single Pulse
Rth(ch-a)(t) = r(t)×Rth(ch-a)
Rth(ch-a) = 57.9°C/W
0.01 0.1 1 10
PULSE WIDTH : Pw(s)
100 1000
1000
100
Fig.14 Maximum Safe Operating Aera
Operation in this area is limited by RDS(ON)
(VGS=-10V)
PW=100us
10
PW=1ms
1 PW = 10ms
DC operation
0.1
TC = 25°C
Single Pulse
0.01
0.1 1
10 100 1000
DRAIN-SOURCE VOLTAGE : -VDS[V]
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© 2011 ROHM Co., Ltd. All rights reserved.
5/6
2011.06 - Rev.A
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet RSJ250P10.PDF ] |
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