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PDF RSD080N06FRA Data sheet ( Hoja de datos )
| Número de pieza | RSD080N06FRA | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | ROHM Semiconductor | |
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4V Drive Nch MOSFET
RRSSDD008800NN0066FRA
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) 4V drive.
3) High power package(CPT3).
Application
Switching
Data Sheet
AEC-Q101 Qualified
Dimensions (Unit : mm)
CPT3
(SC-63)
<SOT-428>
6.5
5.1
2.3
0.5
0.75
0.9 2.3
(1) (2)
0.65
(3) 2.3
0.5
1.0
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RSSDD008800NN060F6RA
Taping
TL
2500
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Power dissipation
Channel temperature
Continuous
Pulsed
Continuous
Pulsed
VDSS
VGSS
ID
IDP *1
IS
ISP *1
PD *2
Tch
Range of storage temperature
Tstg
Limits
60
20
8
16
8
16
15
150
55 to 150
*1 Pw10s, Duty cycle1%
*2 TC=25C
Unit
V
V
A
A
A
A
W
C
C
Inner circuit
∗1
∗2
(1) Gate
(2) Drain
(3) Source
(1) (2) (3)
1 ESD PROTECTION DIODE
2 BODY DIODE
Thermal resistance
Parameter
Channel to Case
* TC=25C
Symbol
Rth (ch-c)*
Limits
8.33
Unit
C / W
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.08 - Rev.A
1 page  
RSD080N06FRA
Data Sheet
10000
1000
Fig.13 Typical Capacitance vs. Drain-Source Voltage
Ta=25°C
f=1MHz
VGS=0V
100
Ciss
Crss
10 Coss
1
0.01
0.1 1 10
Drain-Source Voltage : VDS [V]
100
Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width
10
Ta=25°C
Single Pulse
1
0.1
0.01
0.001
0.0001 0.001
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
Rth(ch-a)=47.4°C/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
0.01 0.1 1 10
Pulse width : Pw (s)
100 1000
Fig.14 Maximum Safe Operating Area
100
Operation in this area
is limited by RDS(on)
(VGS = 10V)
10
1
0.1
Ta=25°C
Single Pulse
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
0.01
0.1
1
10
Drain-Source Voltage : VDS [ V ]
PW = 100μs
PW = 1ms
PW = 10ms
100
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
5/6
2011.08 - Rev.A
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