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Número de pieza | MCP6V03 | |
Descripción | Auto-Zeroed Op Amps | |
Fabricantes | Microchip | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MCP6V03 (archivo pdf) en la parte inferior de esta página. Total 30 Páginas | ||
No Preview Available ! MCP6V01/2/3
300 µA, Auto-Zeroed Op Amps
Features
• High DC Precision:
- VOS Drift: ±50 nV/°C (maximum)
- VOS: ±2 µV (maximum)
- AOL: 130 dB (minimum)
- PSRR: 130 dB (minimum)
- CMRR: 130 dB (minimum)
- Eni: 2.5 µVP-P (typical), f = 0.1 Hz to 10 Hz
- Eni: 0.79 µVp-p (typical), f = 0.01 Hz to 1 Hz
• Low Power and Supply Voltages:
- IQ: 300 µA/amplifier (typical)
- Wide Supply Voltage Range: 1.8V to 5.5V
• Easy to Use:
- Rail-to-Rail Input/Output
- Gain Bandwidth Product: 1.3 MHz (typical)
- Unity Gain Stable
- Available in Single and Dual
- Single with Chip Select (CS): MCP6V03
• Extended Temperature Range: -40°C to +125°C
Typical Applications
• Portable Instrumentation
• Sensor Conditioning
• Temperature Measurement
• DC Offset Correction
• Medical Instrumentation
Design Aids
• SPICE Macro Models
• FilterLab® Software
• Mindi™ Circuit Designer & Simulator
• Microchip Advanced Part Selector (MAPS)
• Analog Demonstration and Evaluation Boards
• Application Notes
Related Parts
• MCP6V06/7/8: Non-spread clock, lower noise
Description
The Microchip Technology Inc. MCP6V01/2/3 family of
operational amplifiers has input offset voltage
correction for very low offset and offset drift. These
devices have a wide gain bandwidth product (1.3 MHz,
typical) and strongly reject switching noise. They are
unity gain stable, have no 1/f noise, and have good
PSRR and CMRR. These products operate with a
single supply voltage as low as 1.8V, while drawing
300 µA/amplifier (typical) of quiescent current.
The Microchip Technology Inc. MCP6V01/2/3 op amps
are offered in single (MCP6V01), single with Chip
Select (CS) (MCP6V03), and dual (MCP6V02). They
are designed in an advanced CMOS process.
Package Types (top view)
MCP6V01
SOIC
MCP6V01
2x3 TDFN *
NC 1
VIN– 2
VIN+ 3
VSS 4
8 NC
NC 1
8 NC
7 VDD
VIN– 2 EP 7 VDD
6 VOUT VIN+ 3 9 6 VOUT
5 NC
VSS 4
5 NC
MCP6V02
SOIC
MCP6V02
4x4 DFN *
VOUTA 1
VINA– 2
VINA+ 3
VSS 4
8 VDD VOUTA 1
8 VDD
7 VOUTB VINA– 2 EP 7 VOUTB
6 VINB–
5 VINB+
VINA+ 3
VSS 4
9
6 VINB–
5 VINB+
MCP6V03
SOIC
MCP6V03
2x3 TDFN *
NC 1
VIN– 2
VIN+ 3
VSS 4
8 CS
NC 1
8 CS
7 VDD
VIN– 2 EP 7 VDD
6 VOUT VIN+ 3 9 6 VOUT
5 NC
VSS 4
5 NC
* Includes Exposed Thermal Pad (EP); see Table 3-1.
© 2008 Microchip Technology Inc.
DS22058C-page 1
1 page MCP6V01/2/3
TABLE 1-3: DIGITAL ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +5.5V, VSS = GND, VCM = VDD/3,
VOUT = VDD/2, VL = VDD/2, RL = 20 kΩ to VL, CL = 60 pF, and CS = GND (refer to Figure 1-5 and Figure 1-6).
Parameters
Sym Min Typ Max Units
Conditions
CS Pull-Down Resistor (MCP6V03)
CS Pull-Down Resistor
RPD
CS Low Specifications (MCP6V03)
3
5 — MΩ
CS Logic Threshold, Low
VIL VSS
— 0.3VDD V
CS Input Current, Low
ICSL
—
5
— pA CS = VSS
CS High Specifications (MCP6V03)
CS Logic Threshold, High
VIH 0.7VDD
—
VDD
V
CS Input Current, High
ICSH
— VDD/RPD —
pA CS = VDD
CS Input High, GND Current per ISS —
amplifier
-0.7
— µA CS = VDD, VDD = 1.8V
ISS — -2.3 — µA CS = VDD, VDD = 5.5V
Amplifier Output Leakage, CS High IO_LEAK — 20 — pA CS = VDD
CS Dynamic Specifications (MCP6V03)
CS Low to Amplifier Output On
Turn-on Time
tON —
11 100 µs CS Low = VSS+0.3 V, G = +1 V/V,
VOUT = 0.9 VDD/2
CS High to Amplifier Output High-Z tOFF
—
10
— µs CS High = VDD – 0.3 V, G = +1 V/V,
VOUT = 0.1 VDD/2
Internal Hysteresis
VHYST
—
0.25
—V
TABLE 1-4: TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, all limits are specified for: VDD = +1.8V to +5.5V, VSS = GND.
Parameters
Sym Min Typ Max Units
Conditions
Temperature Ranges
Specified Temperature Range
TA -40 — +125 °C
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
TA -40 — +125 °C (Note 1)
TA -65 — +150 °C
Thermal Resistance, 8L-2x3 TDFN
Thermal Resistance, 8L-4x4 DFN
θJA — 41 — °C/W
θJA — 44 — °C/W (Note 2)
Thermal Resistance, 8L-SOIC
θJA — 150 — °C/W
Note 1: Operation must not cause TJ to exceed Maximum Junction Temperature specification (150°C).
2: Measured on a standard JC51-7, four layer printed circuit board with ground plane and vias.
© 2008 Microchip Technology Inc.
DS22058C-page 5
5 Page MCP6V01/2/3
Note: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2,
VL = VDD/2, RL = 20 kΩ to VL, CL = 60 pF, and CS = GND.
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50
-25 0
25 50 75 100 125
Ambient Temperature (°C)
FIGURE 2-24:
Power On Reset Voltage vs.
Ambient Temperature.
© 2008 Microchip Technology Inc.
DS22058C-page 11
11 Page |
Páginas | Total 30 Páginas | |
PDF Descargar | [ Datasheet MCP6V03.PDF ] |
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