DataSheet.jp

P2904BD PDF Data sheet ( 特性 )

部品番号 P2904BD
部品説明 N-Channel Enhancement Mode MOSFET
メーカ UNIKC
ロゴ UNIKC ロゴ 



Total 5 pages
		

No Preview Available !

P2904BD Datasheet, P2904BD PDF,ピン配置, 機能
P2904BD
N-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 29mΩ @VGS = 10V
ID
25A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 40
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA= 25 °C
TA= 70 °C
ID
IDM
25
20
75
Avalanche Current
IAS 27
Avalanche Energy2
L=0.1mH
EAS
37
Power Dissipation
TC= 25 °C
TC= 70°C
PD
30
20
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM UNIT
4.1 S
°C / W
40
REV 1.0
1 2014/5/12

1 Page





ページ 合計 : 5 ページ
PDF
ダウンロード
[ P2904BD.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
P2904BD

N-Channel Enhancement Mode MOSFET

UNIKC
UNIKC
P2904BD

N-Channel Logic Level Enhancement Mode Field Effect Transistor

NIKO-SEM
NIKO-SEM

www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap