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B20NM50FDのメーカーはSTMicroelectronicsです、この部品の機能は「N-CHANNEL POWER MOSFET」です。 |
部品番号 | B20NM50FD |
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部品説明 | N-CHANNEL POWER MOSFET | ||
メーカ | STMicroelectronics | ||
ロゴ | |||
このページの下部にプレビューとB20NM50FDダウンロード(pdfファイル)リンクがあります。 Total 16 pages
STB20NM50FD
STF20NM50FD - STP20NM50FD
N-channel 500 V, 0.22 Ω, 20 A D2PAK, TO-220FP, TO-220
FDmesh™ Power MOSFET (with fast diode)
Features
Type
VDSS
RDS(on)
max
RDS(on)*
Qg
ID
STB20NM50FD 500 V < 0.25 Ω 8.36 Ω* nC
STF20NM50FD 500 V < 0.25 Ω 8.36 Ω* nC
STP20NM50FD 500 V < 0.25 Ω 8.36 Ω* nC
20 A
20 A
20 A
■ High dv/dt and avalanche capabilities
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Tight process control and high manufacturing
yields
Application
■ Switching applications
Description
The FDmesh™ associates all advantages of
reduced on-resistance and fast switching with an
intrinsic fast-recovery body diode. It is therefore
strongly recommended for bridge topologies, in
particular ZVS phase-shift converters.
3
2
1
TO-220FP
3
1
D²PAK
3
2
1
TO-220
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Marking
STB20NM50FD
STF20NM50FD
STP20NM50FD
B20NM50FD
F20NM50FD
P20NM50FD
Package
D²PAK
TO-220FP
TO-220
Packaging
Tape and reel
Tube
Tube
April 2008
Rev 9
1/16/
www.st.com
16
1 Page STB20NM50FD - STF20NM50FD - STP20NM50FD
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage (VGS=0)
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25 °C
ID Drain current (continuous) at TC = 100 °C
IDM (2) Drain current (pulsed)
PTOT Total dissipation at TC = 25 °C
dv/dt (3) Peak diode recovery voltage slope
VISO
Tstg
Insulation withstand voltage (RMS) from all three
leads to external heat sink
(t=1 s;TC=25 °C)
Storage temperature
Tj Operating junction temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤ 20 A, di/dt ≤ 200 A/µs, VDD = 80% V(BR)DSS
Value
D²PAK
TO-220
TO-220FP
Unit
500 V
± 30
20 20 (1)
14 14(1)
80 80(1)
V
A
A
A
192 45 W
20 V/ns
--
2500
V
-65 to 150
150
°C
°C
Table 3. Thermal data
Symbol
Parameter
Rthj-case
Rthj-amb
Rthj-pcb
Tl
Thermal resistance junction-case max
Thermal resistance junction-amb max
Thermal resistance junction-pcb max
Maximum lead temperature for
soldering purposes
TO-220 D²PAK
0.65
62.5 --
-- 30
300
TO-220FP Unit
2.8 °C/W
62.5 °C/W
-- °C/W
°C
Table 4. Avalanche characteristics
Symbol
Parameter
IAS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
Single pulse avalanche energy
EAS (starting Tj = 25 °C, ID = IAS, VDD = 35 V)
Max value
10
700
Unit
A
mJ
3/16
3Pages Electrical characteristics
STB20NM50FD - STF20NM50FD - STP20NM50FD
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for TO-220 /
D²PAK
Figure 3. Thermal impedance for TO-220 /
D²PAK
Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP
Figure 6. Output characteristics
Figure 7. Transfer characteristics
6/16
6 Page | |||
ページ | 合計 : 16 ページ | ||
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PDF ダウンロード | [ B20NM50FD データシート.PDF ] |
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部品番号 | 部品説明 | メーカ |
B20NM50FD | N-CHANNEL POWER MOSFET | STMicroelectronics |