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Número de pieza | PV563BA | |
Descripción | P-Channel Enhancement Mode MOSFET | |
Fabricantes | UNIKC | |
Logotipo | ||
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No Preview Available ! PV563BA
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
15mΩ @VGS = -10V
ID
-9.5A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -40
Gate-Source Voltage
VGS ±25
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
-9.5
-7.6
-40
Avalanche Current
IAS -32
Avalanche Energy
L=0.1mH
EAS
53
Power Dissipation3
TA = 25 °C
TA = 70 °C
PD
3
2
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient2
Junction-to-Ambient2
t ≦10s
Steady-State
RqJA
RqJA
40
75
Junction-to-Case
Steady-State
RqJC
24
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz.Copper.in a still air
environment with TA=25°C.
3The Power dissipation is based on RqJA t ≦10s value.
UNITS
°C / W
REV 1.0
1 2016/12/20
1 page PV563BA
P-Channel Enhancement Mode MOSFET
REV 1.0
5 2016/12/20
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet PV563BA.PDF ] |
Número de pieza | Descripción | Fabricantes |
PV563BA | P-Channel Enhancement Mode MOSFET | UNIKC |
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