(PDF) PV555BA Datasheet - P-Channel Enhancement Mode MOSFET

Número de pieza	PV555BA
Descripción	P-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! PV555BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 28mΩ @VGS = -10V ID -6A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -6 -4.7 -24 Avalanche Current IAS -19.3 Avalanche Energy L=0.1mH EAS 18.6 Power Dissipation TA = 25 °C TA = 70 °C PD 1.7 1.1 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RqJA 72 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz.Copper.in a still air environment with TA=25°C. UNITS °C / W REV 1.0 1 2017/1/12 1 page PV555BA P-Channel Enhancement Mode MOSFET REV 1.0 5 2017/1/12 5 Page

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PDF PV555BA Data sheet ( Hoja de datos )