Datasheet P5504EVG Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	P5504EVG	P-Channel Enhancement Mode MOSFET P5504EVG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 55mΩ @VGS = -10V ID -6A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -40 Gate-Source Voltage VGS ±25 Continuou	UNIKC	mosfet
2	P5504EVG	P-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM P-Channel Logic Level Enhancement Mode Field Effect Transistor P5504EVG SOP-8 Lead-Free D PRODUCT SUMMARY V(BR)DSS -40V RDS(ON) 55m ID -5.5A 4 :GATE 5,6,7,8 :DRAIN 1,2,3 :SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDIT	Niko	transistor

P55 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	P5503QV	N & P-Channel Enhancement Mode MOSFET P5503QV N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 30V RDS(ON) 22mΩ @VGS =10V -30V 60mΩ @VGS = -10V ID 7.5A -4.5A Channel N P SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS Drain-Source Voltage N 30 V	UNIKC	mosfet
2	P5504EDG	P-Channel Enhancement Mode MOSFET P5504EDG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 55mΩ @VGS = -10V ID -21A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -40 Gate-Source Voltage VGS ±20 Continuou	UNIKC	mosfet
3	P5504EDG	P-Channel Logic Level Enhancement NIKO-SEM P-Channel Enhancement Mode Field Effect Transistor P5504EDG TO-252 Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS -40V RDS(ON) 55mΩ ID -21A G S 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Volta	Niko-Sem	data
4	P5504EVG	P-Channel Enhancement Mode MOSFET P5504EVG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 55mΩ @VGS = -10V ID -6A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -40 Gate-Source Voltage VGS ±25 Continuou	UNIKC	mosfet
5	P5504EVG	P-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM P-Channel Logic Level Enhancement Mode Field Effect Transistor P5504EVG SOP-8 Lead-Free D PRODUCT SUMMARY V(BR)DSS -40V RDS(ON) 55m ID -5.5A 4 :GATE 5,6,7,8 :DRAIN 1,2,3 :SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDIT	Niko	transistor
6	P5506BDG	N-Channel Enhancement Mode MOSFET P5506BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 55mΩ @VGS = 10V ID 22A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Dra	UNIKC	mosfet
7	P5506BDG	N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM N-Channel Logic Level Enhancement P5506BDG Mode Field Effect Transistor TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 60 55mΩ ID 22A D G 1.GATE 2.DRAIN 3.SOURCE S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYM	Niko	transistor

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Número de pieza	Descripción	Fabricantes	PDF
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