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18P10GHのメーカーはAdvanced Power Electronicsです、この部品の機能は「AP18P10GH」です。 |
部品番号 | 18P10GH |
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部品説明 | AP18P10GH | ||
メーカ | Advanced Power Electronics | ||
ロゴ | |||
このページの下部にプレビューと18P10GHダウンロード(pdfファイル)リンクがあります。 Total 6 pages
Advanced Power
Electronics Corp.
AP18P10GH/J
RoHS-compliant Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
G
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP18P10GJ) is
available for low-profile applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
BVDSS
RDS(ON)
ID
-100V
180mΩ
-12A
G
D
S
TO-252(H)
G
D
S
Rating
-100
±20
-12
-10
-48
35.7
-55 to 150
-55 to 150
TO-251(J)
Units
V
V
A
A
A
W
℃
℃
Value
3.5
110
Units
℃/W
℃/W
Data and specifications subject to change without notice
1
200810162
1 Page 40
T C = 25 o C
30
-10V
-7.0V
-5.0V
-4.5V
20
10
V G = -3.0 V
0
0 4 8 12 16 20
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
300
I D = -8 A
270 T C =25 ℃
240
210
180
150
120
2 4 6 8 10
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
8
6
T j =150 o C
T j =25 o C
4
2
0
0 0.2 0.4 0.6 0.8 1 1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
20
T C =150 o C
15
AP18P10GH/J
-10V
-7.0V
-5.0V
-4.5V
10
V G = -3.0V
5
0
0 2 4 6 8 10
-V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
I D = - 12 A
V G = -10V
1.6
1.2
0.8
0.4
-50 0 50 100
T j , Junction Temperature ( o C)
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
1.5
1.0
0.5
0.0
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
3Pages ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-251
D
D1
E1 E
B2
B1 F
A
c1
A1
Millimeters
SYMBOLS
MIN NOM MAX
A 2.20 2.30 2.40
A1 0.90 1.20 1.50
B1 0.50 0.69 0.88
B2 0.60 0.87 1.14
c 0.40 0.50 0.60
c1 0.40 0.50 0.60
D 6.40 6.60 6.80
D1 5.20 5.35 5.50
E 6.70 7.00 7.30
E1 5.40 5.80 6.20
e ---- 2.30 ----
F 5.88 6.84 7.80
ee
1.All Dimensions Are in Millimeters.
c 2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : TO-251
18P10GJ
YWWSSS
LOGO
Part Number
Package Code
meet Rohs requirement
for low voltage MOSFET only
Date Code (YWWSSS)
Y :Last Digit Of The Year
WW :Week
SSS :Sequence
6
6 Page | |||
ページ | 合計 : 6 ページ | ||
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PDF ダウンロード | [ 18P10GH データシート.PDF ] |
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部品番号 | 部品説明 | メーカ |
18P10GH | AP18P10GH | Advanced Power Electronics |