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P0465CD の電気的特性と機能

P0465CDのメーカーはNIKO-SEMです、この部品の機能は「N-Channel Field Effect Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 P0465CD
部品説明 N-Channel Field Effect Transistor
メーカ NIKO-SEM
ロゴ NIKO-SEM ロゴ 




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P0465CD Datasheet, P0465CD PDF,ピン配置, 機能
NIKO-SEM
N-Channel Enhancement Mode
P0465CD
Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
650V
2.6Ω
ID
4A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1 , 2
Avalanche Current3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
IAS
EAS
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
650
±30
4
2.5
15
2
20
54
21
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed
3VDD = 50V , L = 10mH ,starting TJ = 25˚C
TYPICAL
MAXIMUM
2.3
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±30V
VDS = 650V, VGS = 0V , TC = 25 °C
VDS = 520V, VGS = 0V , TC = 100 °C
650
2.5
V
3.3 4.5
±100 nA
1
A
10
REV1.0
E-09-2
1

1 Page





P0465CD pdf, ピン配列
NIKO-SEM
N-Channel Enhancement Mode
P0465CD
Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
Output Characteristics
5
Transfer Characteristics
5
4
VGS=10V
3
VGS=9V
VGS=8V
VGS=7V
2
VGS=6V
VGS=5.5V
1
VGS=5V
0
0 2 4 6 8 10
VDS, Drain-To-Source Voltage(V)
On-Resistance VS Temperature
3.0
2.5
2.0
1.5
1.0
VGS=10V
0.5 ID=2A
0.0
-50
-25 0
25 50 75 100 125
TJ , Junction Temperature(˚C)
150
Gate charge Characteristics
10 Characteristics
VDS=520V
ID=4A
8
6
4
3
2
25
1
0
02468
VGS, Gate-To-Source Voltage(V)
10
Capacitance Characteristic
900
800
700
600
CISS
500
400
300
200
100
0
0
COSS
CRSS
5 10 15 20 25 30
VDS, Drain-To-Source Voltage(V)
Source-Drain Diode Forward Voltage
100
10
4
1
150
25
2
0
0 3 6 9 12 15
Qg , Total Gate Charge(nC)
0.1
0.0
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-To-Drain Voltage(V)
1.4
REV1.0
E-09-2
3


3Pages





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[ P0465CD データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


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