(PDF) P8010BD Datasheet - N-Channel Enhancement Mode MOSFET

Número de pieza	P8010BD
Descripción	N-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! P8010BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 85mΩ @VGS = 10V ID 15A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Avalanche Current TC = 25 °C TC = 100 °C VGS ID IDM IAS ±20 15 9 35 12 Avalanche Energy L =0.1mH EAS 7.2 MOSFET dV/dt Ruggedness Peak Diode Recovery dV/dt2 Power Dissipation Junction & Storage Temperature Range TC = 25 °C TC = 100 °C dV/dt PD TJ, Tstg 16.2 4.1 46 18 -55 to 150 UNITS V V A mJ V/nS W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case 1Pulse width limited by maximum junction temperature. 2ID=15A,di/dt=100A/uS,VDD<BVdss,Starting Tj=25℃ SYMBOL RqJC TYPICAL MAXIMUM UNITS 2.7 °C / W REV 1.2 1 2014/5/26 1 page P8010BD N-Channel Enhancement Mode MOSFET *因为各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.2 5 2014/5/26 5 Page

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PDF P8010BD Data sheet ( Hoja de datos )