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P1160ZTFS の電気的特性と機能

P1160ZTFSのメーカーはNIKO-SEMです、この部品の機能は「N-Channel Field Effect Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 P1160ZTFS
部品説明 N-Channel Field Effect Transistor
メーカ NIKO-SEM
ロゴ NIKO-SEM ロゴ 




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P1160ZTFS Datasheet, P1160ZTFS PDF,ピン配置, 機能
NIKO-SEM
N-Channel High Voltage Mode
Field Effect Transistor
P1160ZTF:TO-220F
P1160ZTFS:TO-220FS
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
390mΩ
ID
11A
D
G
S
ABSOLUTE MAXIMUN RATINGS(TA=25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1
Avalanche Current3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
IAS
EAS
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction-to-Case
RJc
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Ensure that the channel temperature does not exceed 150°C.
3VDD = 50V , L = 40mH ,starting TJ = 25°C.
1. GATE
2. DRAIN
3. SOURCE
LIMITS
600
±30
11
7
40
3
180
39
15
-55 to 150
UNITS
V
V
A
A
mJ
W
°C
MAXIMUM
3.2
62.5
UNITS
°C / W
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±30V
VDS = 600V, VGS = 0V , TC = 25 °C
VDS = 480V, VGS = 0V , TC = 100 °C
600
2
3.2 4
V
±100 nA
1
A
100
REV 1.0 1 E-42-1

1 Page





P1160ZTFS pdf, ピン配列
NIKO-SEM
N-Channel High Voltage Mode
Field Effect Transistor
P1160ZTF:TO-220F
P1160ZTFS:TO-220FS
Halogen-Free & Lead-Free
Output Characteristics
12
VGS=10V
VGS=9V
10
VGS=8V
VGS=7V
VGS=6V
8
6
4
VGS=5V
2
0
0123456
VDS, Drain-To-Source Voltage(V)
Gate charge Characteristics
10 Characteristics
VDS=480V
ID=5.5A
8
7
6
4
2
0
0 6 12 18 24 30
Qg , Total Gate Charge(nC)
On-Resistance VS Gate-To-Source
0.8Voltage
0.6
0.4
0.2
ID=5.5A
0
2 4 6 8 10
VGS, Gate-To-Source Voltage(V)
Transfer Characteristics
12
10
8
6
25
4 125
2
0
0123456
VGS, Gate-To-Source Voltage(V)
Capacitance Characteristic
10000
7
1000
CISS
100
COSS
10
CRSS
1
0 100 200 300 400 500 600
VDS, Drain-To-Source Voltage(V)
On-Resistance VS Drain Current
0.5
0.4
VGS=10V
0.3
0.2
0.1
0
0369
ID , Drain-To-Source Current(A)
12
REV 1.0 3 E-42-1


3Pages





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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
P1160ZTF

N-Channel Field Effect Transistor

NIKO-SEM
NIKO-SEM
P1160ZTFS

N-Channel Field Effect Transistor

NIKO-SEM
NIKO-SEM


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