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P2060ZTのメーカーはNIKO-SEMです、この部品の機能は「N-Channel Field Effect Transistor」です。 |
部品番号 | P2060ZT |
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部品説明 | N-Channel Field Effect Transistor | ||
メーカ | NIKO-SEM | ||
ロゴ | |||
このページの下部にプレビューとP2060ZTダウンロード(pdfファイル)リンクがあります。 Total 4 pages
NIKO-SEM
N-Channel High Voltage Mode
Field Effect Transistor
P2060ZT
TO-220
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
190mΩ
ID
20A
D
G
S
ABSOLUTE MAXIMUN RATINGS(TA=25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1
Avalanche Current3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction-to-Case
RJc
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Ensure that the channel temperature does not exceed 150°C.
3VDD = 50V , L = 40mH ,starting TJ = 25°C.
1. GATE
2. DRAIN
3. SOURCE
LIMITS
600
±30
20
12
59
4
320
48
19
-55 to 150
UNITS
V
V
A
A
mJ
W
°C
MAXIMUM
1
62.5
UNITS
°C / W
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
MIN TYP MAX
UNIT
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250A
600
VDS = VGS, ID = 250A
2 3.1 4
VDS = 0V, VGS = ±30V
±100
VDS = 600V, VGS = 0V , TC = 25 °C
1
VDS = 480V, VGS = 0V , TC = 100 °C
100
V
nA
A
REV 1.0
1
F-27-3
1 Page NIKO-SEM
N-Channel High Voltage Mode
Field Effect Transistor
P2060ZT
TO-220
Halogen-Free & Lead-Free
Output Characteristics
20
VGS=10V
VGS=9V
VGS=8V
16 VGS=7V
VGS=6V
VGS=5.5V
12
8 VGS=5V
4
0
0 2 4 6 8 10
VDS, Drain-To-Source Voltage(V)
On-Resistance VS Gate-To-Source
1
0.8
0.6
0.4
0.2
0
2
ID=20A
4 6 8 10
VGS, Gate-To-Source Voltage(V)
On-Resistance VS Temperature
3.0
2.5
2.0
1.5
1.0
VGS=10V
0.5 ID=10A
0.0
-50
-25 0 25 50 75 100 125
TJ , Junction Temperature(˚C)
150
Transfer Characteristics
20
16
12
8
25℃
4
125℃
-20℃
0
0123456
VGS, Gate-To-Source Voltage(V)
7
On-Resistance VS Drain Current
0.5
0.4
0.3
0.2
VGS=10V
0.1
0
0 4 8 12 16
ID , Drain-To-Source Current(A)
20
Capacitance Characteristic
10000
1000
CISS
COSS
100
CRSS
10
1
0 120 240 360 480 600
VDS, Drain-To-Source Voltage(V)
REV 1.0
3
F-27-3
3Pages | |||
ページ | 合計 : 4 ページ | ||
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PDF ダウンロード | [ P2060ZT データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
P2060ZT | N-Channel Field Effect Transistor | NIKO-SEM |
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