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P0610BT の電気的特性と機能

P0610BTのメーカーはNIKO-SEMです、この部品の機能は「N-Channel Field Effect Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 P0610BT
部品説明 N-Channel Field Effect Transistor
メーカ NIKO-SEM
ロゴ NIKO-SEM ロゴ 




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P0610BT Datasheet, P0610BT PDF,ピン配置, 機能
NIKO-SEM
N-Channel Enhancement Mode
P0610BT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
6.5mΩ
ID2
120A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
100
±20
120
76
375
39
770
208
83
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Package limitation current is 110A
TYPICAL
MAXIMUM
0.6
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNITS
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250A
100
VDS = VGS, ID = 250A
1.3 1.8 2.3
VDS = 0V, VGS = ±20V
±100
VDS = 80V, VGS = 0V
1
VDS = 80V, VGS = 0V, TJ = 125 °C
10
V
nA
A
REV 1.1
1
E-41-4

1 Page





P0610BT pdf, ピン配列
NIKO-SEM
N-Channel Enhancement Mode
P0610BT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
Output Characteristics
70
VGS=3V
56 VGS=10V
VGS=9V
VGS=8V
VGS=7V
42 VGS=6V
VGS=5V
VGS=4.5V
28 VGS=2.8V
14 VGS=2.7V
0
012345
VDS, Drain-To-Source Voltage(V)
6
On-Resistance VS Temperature
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8 VGS=10V
ID=20A
0.6
0.4
-50
-25 0
25 50 75 100 125
TJ , Junction Temperature(˚C)
150
Gate charge Characteristics
10 Characteristics
VDS=50V
8 ID=20A
6
4
2
0
0 24 48 72 96 120
Qg , Total Gate Charge(nC)
REV 1.1
3
Transfer Characteristics
70
56
42
28 25
125
-20
14
0
01234
VGS, Gate-To-Source Voltage(V)
5
Capacitance Characteristic
8000
7000
6000
CISS
5000
4000
3000
2000
1000
0
0
COSS
CRSS
5 10 15 20 25 30
VDS, Drain-To-Source Voltage(V)
Source-Drain Diode Forward Voltage
100
10
150
1
25
0.1
0.0
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-To-Drain Voltage(V)
1.4
E-41-4


3Pages





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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
P0610BT

N-Channel Field Effect Transistor

NIKO-SEM
NIKO-SEM
P0610BT

N-Channel Enhancement Mode MOSFET

UNIKC
UNIKC
P0610BTF

N-Channel Field Effect Transistor

NIKO-SEM
NIKO-SEM
P0610BTF

N-Channel Enhancement Mode MOSFET

UNIKC
UNIKC


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