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P8010BTF の電気的特性と機能

P8010BTFのメーカーはNIKO-SEMです、この部品の機能は「N-Channel Field Effect Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 P8010BTF
部品説明 N-Channel Field Effect Transistor
メーカ NIKO-SEM
ロゴ NIKO-SEM ロゴ 




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P8010BTF Datasheet, P8010BTF PDF,ピン配置, 機能
NIKO-SEM
N-Channel Enhancement Mode
P8010BTF
Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
85mΩ
ID
11A
D
G
1. GATE
2. DRAIN
3. SOURCE
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
Avalanche Energy
Power Dissipation
Junction & Storage Temperature Range
TC = 25 °C
TC = 100 °C
L = 0.1mH
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
IAS
EAS
PD
TJ, Tstg
LIMITS
100
±20
11
7
35
14
10
24
9.6
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
TYPICAL
MAXIMUM
5.2
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
STATIC
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±20V
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125 °C
VGS = 4.5V, ID = 10A
VGS = 10V , ID = 11A
VDS = 10V, ID = 11A
LIMITS UNIT
MIN TYP MAX
100
1.3 1.8 2.3
V
±100 nA
1
10 A
61 95
mΩ
59 85
28 S
REV1.1
1
D-51-5

1 Page





P8010BTF pdf, ピン配列
NIKO-SEM
N-Channel Enhancement Mode
P8010BTF
Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
Output Characteristics
30
VGS=10V
VGS=9V
VGS=8V
24 VGS=7V
VGS=6V
VGS=5V
VGS=4.5V
VGS=3.5V
VGS=4V
18
Transfer Characteristics
30
24
18
12
VGS=3V
6
0
01234
VDS, Drain-To-Source Voltage(V)
5
On-Resistance VS Temperature
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
VGS=10V
0.5 ID=11A
0.3
-50
-25 0
25 50 75 100
TJ , Junction Temperature(˚C)
125
150
Gate charge Characteristics
10 Characteristics
VDS=50V
ID=11A
8
6
12
125
-20
6
25
0
012345
VGS, Gate-To-Source Voltage(V)
Capacitance Characteristic
700
600
CISS
500
400
300
200
100
0
0
COSS
CRSS
5 10 15 20 25 30
VDS, Drain-To-Source Voltage(V)
Source-Drain Diode Forward Voltage
100
10
4 15025
1
2
0
0 3 6 9 12
Qg , Total Gate Charge(nC)
15
0.1
0.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, Source-To-Drain Voltage(V)
REV1.1
3
D-51-5


3Pages





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共有リンク

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部品番号部品説明メーカ
P8010BT

N-Channel Field Effect Transistor

NIKO-SEM
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P8010BT

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P8010BTF

N-Channel Field Effect Transistor

NIKO-SEM
NIKO-SEM
P8010BTF

N-Channel Enhancement Mode MOSFET

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