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P1006BTF の電気的特性と機能

P1006BTFのメーカーはNIKO-SEMです、この部品の機能は「N-Channel Field Effect Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 P1006BTF
部品説明 N-Channel Field Effect Transistor
メーカ NIKO-SEM
ロゴ NIKO-SEM ロゴ 




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P1006BTF Datasheet, P1006BTF PDF,ピン配置, 機能
NIKO-SEM
N-Channel Enhancement Mode
P1006BTF
Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 10mΩ
ID
47A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
Avalanche Energy
Power Dissipation
Junction & Storage Temperature Range
TC = 25 ° C
TC = 100 ° C
L = 0.1mH
TC = 25 ° C
TC = 100 ° C
VDS
VGS
ID
IDM
IAS
EAS
PD
TJ, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RJA
Junction-to-Case
RJC
1Pulse width limited by maximum junction temperature.
TYPICAL
1: GATE
2: DRAIN
3: SOURCE
LIMITS
60
±20
47
29
150
38
72.7
48
19
-55 to 150
UNITS
V
V
A
mJ
W
°C
MAXIMUM
62.5
2.6
UNITS
°C /W
.ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±20V
VDS = 48V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125 ° C
VGS = 4.5V, ID = 20A
VGS =10V, ID = 20A
60
1.3
1.8 2.3
±100
1
10
8.2 13
7 10
V
nA
A
mΩ
REV 1.0
1
D-41-3

1 Page





P1006BTF pdf, ピン配列
NIKO-SEM
N-Channel Enhancement Mode
P1006BTF
Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
Output Characteristics
40
VGS=10V
VGS=9V
VGS=8V
32 VGS=7V
VGS=6V
VGS=5V
VGS=4.5V
24
VGS=3.5V
VGS=3V
16
8
0
01234
VDS, Drain-To-Source Voltage(V)
On-Resistance VS Temperature
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
VGS=10V
0.6 ID=20A
0.4
-50
-25 0 25 50 75 100
TJ , Junction Temperature(˚C)
125
Gate charge Characteristics
10 Characteristics
VDS=30V
ID=20A
8
5
150
6
Transfer Characteristics
40
32
24
-20
16
25
8
125
0
01234
VGS, Gate-To-Source Voltage(V)
Capacitance Characteristic
2500
5
2000
1500
CISS
1000
500
0
0
COSS
CRSS
5 10 15 20 25 30
VDS, Drain-To-Source Voltage(V)
Source-Drain Diode Forward Voltage
100
150
25
10
4
1
2
0
0 8 16 24 32
Qg , Total Gate Charge(nC)
40
0.1
0.0
0.2 0.4 0.6 0.8 1.0
VSD, Source-To-Drain Voltage(V)
1.2
REV 1.0
3
D-41-3


3Pages





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共有リンク

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部品番号部品説明メーカ
P1006BT

N-Channel Field Effect Transistor

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P1006BT

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P1006BTF

N-Channel Field Effect Transistor

NIKO-SEM
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P1006BTF

N-Channel Enhancement Mode MOSFET

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