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P0690ATFS の電気的特性と機能

P0690ATFSのメーカーはNIKO-SEMです、この部品の機能は「N-Channel High Voltage Mode Field Effect Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 P0690ATFS
部品説明 N-Channel High Voltage Mode Field Effect Transistor
メーカ NIKO-SEM
ロゴ NIKO-SEM ロゴ 




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P0690ATFS Datasheet, P0690ATFS PDF,ピン配置, 機能
NIKO-SEM
N-Channel High Voltage Mode P0690ATF:TO-220F
Field Effect Transistor
P0690ATFS:TO-220FS
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
900V
2.35Ω
ID
6A
D
G
S
ABSOLUTE MAXIMUN RATINGS(TA=25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1
Avalanche Current3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
IAS
EAS
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Ensure that the channel temperature does not exceed 150°C.
3VDD = 50V , L = 10mH ,starting TJ = 25°C.
1. GATE
2. DRAIN
3. SOURCE
LIMITS
900
±30
6
3.5
18
3
45
52
20
-55 to 150
UNITS
V
V
A
mJ
W
°C
MAXIMUM
2.4
62.5
UNITS
°C / W
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250A
900
VDS = VGS, ID = 250A
2.5 3.8 4.5
VDS = 0V, VGS = ±30V
±100
VDS = 900V, VGS = 0V , TC = 25 °C
1
VDS = 720V, VGS = 0V , TC = 100 °C
100
V
nA
A
REV 1.0 1 D-36-5

1 Page





P0690ATFS pdf, ピン配列
NIKO-SEM
N-Channel High Voltage Mode P0690ATF:TO-220F
Field Effect Transistor
P0690ATFS:TO-220FS
Halogen-Free & Lead-Free
Output Characteristics
6
VGS=10V
VGS=9V
5 VGS=8V
VGS=7V
4
VGS=6V
3
2
VGS=5.5V
1
VGS=5V
0
0 3 6 9 12 15
VDS, Drain-To-Source Voltage(V)
On-Resistance VS Temperature
2.8
Transfer Characteristics
6
5
4
3
25
2
1
125
-20
0
0
2500
2468
VGS, Gate-To-Source Voltage(V)
Capacitance Characteristic
10
2.4
2.0
1.6
1.2
VGS=10V
0.8 ID=3A
0.4
-50
-25 0
25 50 75 100 125
TJ , Junction Temperature(˚C)
150
Gate charge Characteristics
10 Characteristics
VDS=720V
8 ID=6A
2000
1500
CISS
1000
500
0
0
COSS
CRSS
5 10 15 20 25 30
VDS, Drain-To-Source Voltage(V)
Source-Drain Diode Forward Voltage
10
6
1
4
150
25
2
0
0 7 14 21 28 35
Qg , Total Gate Charge(nC)
0.1
0.0
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-To-Drain Voltage(V)
1.4
REV 1.0 3 D-36-5


3Pages





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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


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