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PDF K20E60U Data sheet ( Hoja de datos )
| Número de pieza | K20E60U | |
| Descripción | TK20E60U | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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TK20E60U
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS )
TK20E60U
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 0.165 (typ.)
• High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.)
• Low leakage current: IDSS = 100 A (VDS = 600 V)
• Enhancement-mode: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
600
±30
20
40
190
144
15
19
150
−55~150
Unit
V
V
A
W
mJ
A
mJ
°C
°C
Unit: mm
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-10V1A
Weight : 1.35 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data
(i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
Rth (ch-c)
Rth (ch-a)
Max
0.658
83.3
Unit
°C/W
°C/W
2
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 1.12 mH, RG = 25 , IAR = 15 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1
3
1 2010-02-10
1 page  
TK20E60U
rth – tw
10
1
Duty=0.5
0.2
0.1
0.1 0.05
Single pulse
0.01
0.02
0.01
10
100
1 10 100
Pulse width tw (s)
PDM
t
T
Duty = t/T
Rth (ch-c) = 0.658°C/W
1 10
Safe operating area
100
ID max (Pulse) *
ID max (Continuous)
10 1 ms *
100 µs *
DC operation
1 Tc = 25°C
0.1
* Single nonrepetitive
0.01
pulse Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
0.001
0.1
1
10
VDSS max
100 1000
Drain−source voltage VDS (V)
EAS – Tch
200
160
120
80
40
0
25 50 75 100 125 150
Channel temperature (initial) Tch (°C)
15 V
−15 V
BVDSS
IAR
VDD
VDS
TEST CIRCUIT
WAVEFORM
RG = 25 Ω
VDD = 90 V, L = 0.63 mH
ΕAS
=
1
2
⋅L ⋅I2
⋅ ⎜⎜⎝⎛
BVDSS
BVDSS − VDD
⎟⎟⎠⎞
5 2010-02-10
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet K20E60U.PDF ] | |
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