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FGB20N60SFD の電気的特性と機能

FGB20N60SFDのメーカーはFairchild Semiconductorです、この部品の機能は「IGBT ( Insulated Gate Bipolar Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 FGB20N60SFD
部品説明 IGBT ( Insulated Gate Bipolar Transistor )
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FGB20N60SFD Datasheet, FGB20N60SFD PDF,ピン配置, 機能
March 2015
FGB20N60SFD
600 V, 20 A Field Stop IGBT
Features
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 2.2 V @ IC = 20 A
• High Input Impedance
• Fast Switching : EOFF = 8 uJ/A
• RoHS Compliant
Applications
• Solar Inverter, UPS, Welder, PFC
General Description
Using novel field stop IGBT technology, Fairchild’s field stop
IGBTs offer the optimum performance for solar inverter, UPS,
welder and PFC applications where low conduction and switch-
ing losses are essential.
COLLECTOR
(FLANGE)
GC E
TO-263AB/D2-PAK
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM(1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate-to-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
C
G
E
Ratings
600
±20
±30
40
20
60
20
10
60
208
83
-55 to +150
-55 to +150
300
Unit
V
V
A
A
A
A
A
A
W
W
oC
oC
oC
©2011 Fairchild Semiconductor Corporation
FGB20N60SFD Rev. 1.6
1
www.fairchildsemi.com

1 Page





FGB20N60SFD pdf, ピン配列
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Qg Total Gate Charge
Qge Gate to Emitter Charge
Qgc Gate to Collector Charge
VCE = 400 V, IC = 20 A,
VGE = 15 V
- 65 - nC
- 7 - nC
- 33 - nC
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
VFM Diode Forward Voltage
IF = 10 A
TC = 25oC
TC = 125oC
trr
Qrr
Diode Reverse Recovery Time
IF =10 A, diF/dt = 200 A/μs
Diode Reverse Recovery Charge
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
Min.
-
-
-
-
-
-
Typ.
1.9
1.7
34
57
41
96
Max
2.5
-
-
-
-
-
Unit
V
ns
nC
©2011 Fairchild Semiconductor Corporation
FGB20N60SFD Rev. 1.6
3
www.fairchildsemi.com


3Pages


FGB20N60SFD 電子部品, 半導体
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Gate Resistance
1000
Common Emitter
VCC = 400V, VGE = 15V
IC = 20A
TC = 25oC
TC = 125oC
td(off)
100
tf
10
0 10 20 30 40 50 60
Gate Resistance, RG [Ω]
Figure 15. Turn-off Characteristics vs.
Collector Current
300
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
100
td(off)
Figure 14. Turn-on Characteristics vs.
Collector Current
200
Common Emitter
VGE = 15V, RG = 10Ω
100 TC = 25oC
TC = 125oC
tr
10 td(on)
3
0 10 20 30
Collector Current, IC [A]
Figure 16. Switching Loss vs.
Gate Resistance
3
Common Emitter
VCC = 400V, VGE = 15V
IC = 20A
1 TC = 25oC
TC = 125oC
Eon
40
tf
10
0 10 20 30
Collector Current, IC [A]
Figure 17. Switching Loss vs.
Collector Current
10
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
1
Eon
40
Eoff
0.1
0.02
0
10 20 30
Collector Current, IC [A]
40
Eoff
0.1
0
10 20 30 40 50
Gate Resistance, RG [Ω]
60
Figure 18. Turn off Switching
SOA Characteristics
80
10
Safe Operating Area
VGE = 15V, TC = 125oC
1
1 10
100
Collector-Emitter Voltage, VCE [V]
1000
©2011 Fairchild Semiconductor Corporation
FGB20N60SFD Rev. 1.6
6
www.fairchildsemi.com

6 Page



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共有リンク

Link :


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FGB20N60SFD_F085

20A Field Stop IGBT

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