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PDF FGB5N60UNDF Data sheet ( Hoja de datos )
| Número de pieza | FGB5N60UNDF | |
| Descripción | IGBT | |
| Fabricantes | Fairchild Semiconductor | |
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FGB5N60UNDF
600 V, 5 A
Short Circuit Rated IGBT
Features
• Short Circuit Rated 10 us
• High Current Capability
• High Input Impedance
• Fast Switching
• RoHS Compliant
Applications
• Sewing Machine, CNC, Home Appliances, Motor Control
September 2013
General Description
Using advanced NPT IGBT technology, Fairchild’s the NPT
IGBTs offer the optimum performance for low-power inverter-
driven applications where low-losses and short-circuit rugged-
ness features are essential, such as sewing machine, CNC,
motor control and home appliances.
C
GC E
COLLECTOR
(FLANGE)
TO-263AB/D2-PAK
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (PCB Mount)(2)
Notes:
2: Mounted on 1” square PCB (FR4 or G-10 material)
G
E
Ratings
600
± 20
10
5
15
5
2.5
73.5
29.4
-55 to +150
-55 to +150
300
Typ.
Max.
1.7
4.5
40
Unit
V
V
A
A
A
A
A
W
W
oC
oC
oC
Unit
oC/W
oC/W
oC/W
©2011 Fairchild Semiconductor Corporation
FGB5N60UNDF Rev. C1
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter
TC = 125oC
16
10A
12
5A
8
IC = 2.5A
4
0
4 8 12 16 20
Gate-Emitter Voltage, VGE [V]
Figure 9. Gate charge Characteristics
15
400V
12 VCC = 100V
200V
9
6
3
Common Emitter
TC = 25oC
0
0 5 10 15
Gate Charge, Qg [nC]
Figure 11. Turn-on Characteristics vs.
Gate Resistance
100
Common Emitter
VCC = 400V, VGE = 15V
IC = 5A
TC = 25oC
TC = 125oC
tr
10
td(on)
1
0 10 20 30 40 50
Gate Resistance, RG [Ω]
Figure 8. Capacitance Characteristics
1000
100
Cies
Coes
Cres
10
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
1
1 10
Collector-Emitter Voltage, VCE [V]
30
Figure 10. SOA Characteristics
20
10
100μs
1ms
10 ms
10μs
1 DC
*Notes:
1. TC = 25oC
0.1
2. TJ = 150oC
3. Single Pulse
0.05
1
10 100
Collector-Emitter Voltage, VCE [V]
1000
Figure 12. Turn-off Characteristics vs.
Gate Resistance
1000
tf
100
10
1
0
td(off)
Common Emitter
VCC = 400V, VGE = 15V
IC = 5A
TC = 25oC
TC = 125oC
10 20 30 40
Gate Resistance, RG [Ω]
50
©2011 Fairchild Semiconductor Corporation
FGB5N60UNDF Rev. C1
5
www.fairchildsemi.com
5 Page | ||
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