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FGA25N120ANTDTU の電気的特性と機能

FGA25N120ANTDTUのメーカーはFairchild Semiconductorです、この部品の機能は「IGBT ( Insulated Gate Bipolar Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 FGA25N120ANTDTU
部品説明 IGBT ( Insulated Gate Bipolar Transistor )
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FGA25N120ANTDTU Datasheet, FGA25N120ANTDTU PDF,ピン配置, 機能
FGA25N120ANTDTU
1200 V, 25 A NPT Trench IGBT
Features
• NPT Trench Technology, Positive Temperature Coefficient
• Low Saturation Voltage: VCE(sat), typ = 2.0 V
@ IC = 25 A and TC = 25°C
• Low Switching Loss: Eoff, typ = 0.96 mJ
@ IC = 25 A and TC = 25°C
• Extremely Enhanced Avalanche Capability
Applications
• Induction Heating, Microwave Oven
April 2014
Description
Using Fairchild's proprietary trench design and advanced NPT
technology, the 1200V NPT IGBT offers superior conduction
and switching performances, high avalanche ruggedness and
easy parallel operation. This device is well suited for the reso-
nant or soft switching application such as induction heating,
microwave oven.
GCE
TO-3P
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25°C
@ TC = 100°C
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
@ TC = 25°C
@ TC = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25°C
@ TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
(1) Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(DIODE)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
©2006 Fairchild Semiconductor Corporation
FGA25N120ANTDTU Rev. C2
1
C
G
E
Ratings
1200
± 20
50
25
90
50
25
150
312
125
-55 to +150
-55 to +150
300
Unit
V
V
A
A
A
A
A
A
W
W
°C
°C
°C
Typ.
--
--
--
Max.
0.4
2.0
40
Unit
°C/W
°C/W
°C/W
www.fairchildsemi.com

1 Page





FGA25N120ANTDTU pdf, ピン配列
Electrical Characteristics of DIODE TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
VFM Diode Forward Voltage
IF = 25 A
TC = 25°C
TC = 125°C
trr Diode Reverse Recovery Time
TC = 25°C
TC = 125°C
Irr
Diode Peak Reverse Recovery Cur- IF = 25 A
rent diF/dt = 200 A/μs
TC = 25°C
TC = 125°C
Qrr Diode Reverse Recovery Charge
TC = 25°C
TC = 125°C
Min.
--
--
--
--
--
--
--
--
Typ.
2.0
2.1
235
300
27
31
3130
4650
Max.
3.0
--
350
--
40
--
4700
--
Unit
V
ns
A
nC
©2006 Fairchild Semiconductor Corporation
FGA25N120ANTDTU Rev. C2
3
www.fairchildsemi.com


3Pages


FGA25N120ANTDTU 電子部品, 半導体
Typical Performance Characteristics (Continued)
Figure 13. Switching Loss vs. Collector Current Figure 14. Gate Charge Characteristics
Common Emitter
VGE = ±15V, RG = 10Ω
10 TC = 25°C
TC = 125°C
1
Eon
Eoff
0.1
10
20 30 40
Collector Current, IC [A]
50
16
Common Emitter
14 RL = 24Ω
TC = 25°C
12
10
Vcc = 200V
600V
400V
8
6
4
2
0
0 20 40 60 80 100 120 140 160 180 200
Gate Charge, Qg [nC]
Figure 15. SOA Characteristics
100 Ic MAX (Pulsed)
Ic MAX (Continuous)
10
1
50μs
100μs
1ms
DC Operation
Single Nonrepetitive
0.1 Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
0.01
0.1 1 10
100
Collector - Emitter Voltage, VCE [V]
1000
Figure 16. Turn-Off SOA
100
10
Safe Operating Area
1 VGE = 15V, TC = 125°C
1 10 100 1000
Collector-Emitter Voltage, VCE [V]
Figure 17. Transient Thermal Impedance of IGBT
10
1
10 .
0 .0 1
0.5
0.2
0.1
0.05
0.02
0.01
1E-3
1E-5
single pulse
1E-4
1 E - 3 0 .0 1
0 .1
R e c ta n g u la r P u ls e D u r a tio n [ s e c ]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
1 10
©2006 Fairchild Semiconductor Corporation
FGA25N120ANTDTU Rev. C2
6
www.fairchildsemi.com

6 Page



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部品番号部品説明メーカ
FGA25N120ANTDTU

IGBT ( Insulated Gate Bipolar Transistor )

Fairchild Semiconductor
Fairchild Semiconductor


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