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PDF FGA50N100BNTD Data sheet ( Hoja de datos )
| Número de pieza | FGA50N100BNTD | |
| Descripción | IGBT | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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November 2013
FGA50N100BNTD
1000 V NPT Trench IGBT
General Description
Using Fairchild's proprietary trench design and advanced
NPT technology, the 1000V NPT IGBT offers superior
conduction and switching performances, high avalanche
ruggedness and easy parallel operation. This device offers
the optimum performance for hard switching application
such as UPS, welder applications.
Features
• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60 A
• High Input Impedance
• Built-in Fast Recovery Diode
Application
UPS, Welder, Induction Heating, Microwave Oven
C
GCE
TO-3P
Absolute Maximum Ratings TC = 25C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
IF
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25C
@ TC = 100C
Diode Continuous Forward Current
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25C
@ TC = 100C
@ TC = 25C
@ TC = 100C
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT)
RJC(DIODE)
RJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
E
Ratings
1000
25
50
35
100
30
15
156
63
-55 to +150
-55 to +150
300
Typ.
--
--
--
Max.
0.8
2.4
25
Unit
V
V
A
A
A
A
A
W
W
C
C
C
Unit
C/W
C/W
C/W
©2006 Fairchild Semiconductor Corporation
FGA50N100BNTD Rev. C1
1
www.fairchildsemi.com
1 page  
100
T = 100 oC
C
10
T = 25oC
C
1
0.1
0.0
0.5 1.0 1.5 2.0
Forward Voltage, V [V]
F
Fig 13. Forward Characteristics
2.5
di/dt=-20A/us
1.2
T =25 oC
12
C
1.0
t
rr
0.8 I
rr
0.6
10
8
6
0.4 4
10 20 30 40 50 60
Forward Current, I [A]
F
Fig 15. Reverse Recovery Characteristics vs.
Forward Current
250
T = 25 oC
C
200
150
100
50
0
0.1 1
10
Reverse Voltage, V [V]
R
Fig 17. Junction capacitance
100
1.2 120
I = 60 A
F
T = 25 oC
1.0 C 100
0.8
t
rr
0.6
80
60
0.4 40
0.2 I
rr
20
0.0
0
0
40 80 120 160 200 240
di/dt [A/us]
Fig 14. Reverse Recovery Characteristics
vs. diF/dt
1000
100
T = 150 oC
C
10
1
0.1
0.01
T = 25 oC
C
1E-3
0
300 600
Reverse Voltage, V [V]
R
900
Fig 16. Reverse Current vs. Reverse Voltage
©2006 Fairchild Semiconductor Corporation
FGA50N100BNTD Rev. C1
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FGA50N100BNTD.PDF ] | |
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