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FGA50N100BNTD2 の電気的特性と機能

FGA50N100BNTD2のメーカーはFairchild Semiconductorです、この部品の機能は「IGBT ( Insulated Gate Bipolar Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 FGA50N100BNTD2
部品説明 IGBT ( Insulated Gate Bipolar Transistor )
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FGA50N100BNTD2 Datasheet, FGA50N100BNTD2 PDF,ピン配置, 機能
FGA50N100BNTD2
1000 V NPT Trench IGBT
Features
• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60 A
• High Input Impedance
• Built-in Fast Recovery Diode
• RoHS Compliant
Applications
• UPS, Welder
November 2013
General Description
Using Fairchild's proprietary trench design and advanced NPT
technology, the 1000V NPT IGBT offers superior conduction
and switching performances, high avalanche ruggedness and
easy parallel operation. This device offers the optimum perfor-
mance for hard switching application such as UPS, welder
applications.
C
GCE
TO-3P
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25oC
@ TC = 100oC
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
@ TC = 25oC
@ TC = 100oC
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT)
RJC(DIODE)
RJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
©2009 Fairchild Semiconductor Corporation
FGA50N100BNTD2 Rev. C1
1
G
E
Ratings
1000
± 25
50
35
200
30
15
150
156
63
-55 to +150
-55 to +150
300
Unit
V
V
A
A
A
A
A
A
W
W
oC
oC
oC
Typ.
-
-
-
Max.
0.8
1.2
40.0
Unit
oC/W
oC/W
oC/W
www.fairchildsemi.com

1 Page





FGA50N100BNTD2 pdf, ピン配列
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
200
TC = 25oC
160
20V
15V
10V
9V
120
80
8V
40
7V
VGE = 6V
0
0 2 4 6 8 10
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage
Characteristics
200
Common Emitter
VGE = 15V
160 TC = 25oC
TC = 125oC
120
Figure 2. Typical Output Characteristics
200
TC = 125oC
160
20V
15V
10V
9V
120
8V
80
7V
40
VGE = 6V
0
0 2 4 6 8 10
Collector-Emitter Voltage, VCE [V]
Figure 4. Transfer Characteristics
200
Common Emitter
VCE = 20V
160 TC = 25oC
TC = 125oC
120
80 80
40 40
0
01234567
Collector-Emitter Voltage, VCE [V]
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
4.5
Common Emitter
VGE = 15V
90A
60A
3.0
30A
1.5
1.0
25
IC = 10A
50 75 100
Case Temperature, TC [oC]
125
0
2 4 6 8 10 12
Gate-Emitter Voltage,VGE [V]
Figure 6. Saturation Voltage vs. VGE
20
Common Emitter
TC = -40oC
16
12
60A
8
30A
4
90A
IC = 10A
0
0 4 8 12 16 20
Gate-Emitter Voltage, VGE [V]
©2009 Fairchild Semiconductor Corporation
FGA50N100BNTD2 Rev. C1
3
www.fairchildsemi.com


3Pages


FGA50N100BNTD2 電子部品, 半導体
Typical Performance Characteristics
Figure19. Turn offSwitchingSOACharacterisics
250
100
Figure20.Forward Characteristics
200
100
TJ = 125oC
10
Safe Operating Area
VGE = 15V, TC = 125oC
1
1 10 100 1000 3000
Collector-Emitter Voltage, VCE [V]
10
TJ = 25oC
1
0.1
0
TC = 25oC
TC = 125oC
12345
Forward Voltage, VF [V]
6
Figure 21. Reverse Current
300
100
TJ = 125oC
10
1
0.1
0.01
TJ = 25oC
1E-3
50
200 400 600 800
Reverse Voltage, VR [V]
1000
Figure 23. Reverse Recovery Characteristics vs.
Forward Current
80 6
Figure 22. Reverse Recovery Characteristics vs.
diF/dt
80 10
Trr
8
60
Irr
6
40
4
20
2
IF = 60A
TC = 25oC
00
20 40 60 80 100 120 140 160 180 200
diF/dt[A/s]
Trr
Irr
70 4
60
10
diF/dt = 100A/s
TC = 25oC
2
20 30 40 50 60
Forward Current,IF[A]
©2009 Fairchild Semiconductor Corporation
FGA50N100BNTD2 Rev. C1
6
www.fairchildsemi.com

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
FGA50N100BNTD

IGBT ( Insulated Gate Bipolar Transistor )

Fairchild Semiconductor
Fairchild Semiconductor
FGA50N100BNTD2

IGBT ( Insulated Gate Bipolar Transistor )

Fairchild Semiconductor
Fairchild Semiconductor


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