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FGA6560WDFのメーカーはFairchild Semiconductorです、この部品の機能は「IGBT ( Insulated Gate Bipolar Transistor )」です。 |
部品番号 | FGA6560WDF |
| |
部品説明 | IGBT ( Insulated Gate Bipolar Transistor ) | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとFGA6560WDFダウンロード(pdfファイル)リンクがあります。 Total 9 pages
FGA6560WDF
650 V, 60 A Field Stop Trench IGBT
April 2015
Features
• Maximum Junction Temperature : TJ =175oC
• Positive Temperaure Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) =1.8 V(Typ.) @ IC = 60 A
• 100% of the Parts Tested for ILM(1)
• High Input Impedance
• Fast Switching
• RoHS Compliant
General Description
Using novel field stop IGBT technology, Fairchild’s new series of
field stop 3rd generation IGBTs offer the optimum performance
for welder and industrial applications where low conduction and
switching losses are essential.
Applications
• Welder and Industrial Application
• Power Factor Correction
G
C
E
TO-3PN
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ILM (1)
ICM (2)
IF
IFM (2)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
@ TC = 25oC
@ TC = 100oC
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 100oC
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1. VCC = 400 V, VGE = 15 V, IC =180 A, RG = 62 Inductive Load
2. Repetitive rating: Pulse width limited by max. junction temperature
©2015 Fairchild Semiconductor Corporation
FGA6560WDF Rev. 1.1
1
C
G
E
FGA6560WDF
650
20
30
120
60
180
180
60
30
120
306
153
-55 to +175
-55 to +175
300
Unit
V
V
V
A
A
A
A
A
A
A
W
W
oC
oC
oC
www.fairchildsemi.com
1 Page Electrical Characteristics of the IGBT (Continued)
Symbol
Parameter
Test Conditions
Qg Total Gate Charge
Qge Gate to Emitter Charge
Qgc Gate to Collector Charge
VCE = 400 V, IC = 60 A,
VGE = 15 V
Min.
-
-
-
Typ.
84
15
32
Max
-
-
-
Unit
nC
nC
nC
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
VFM Diode Forward Voltage
IF = 30 A
TC = 25oC
TC = 175oC
Erec Reverse Recovery Energy
TC = 175oC
trr
Diode Reverse Recovery Time
IF = 30 A, dIF/dt = 200 A/s
TC = 25oC
TC = 175oC
Qrr Diode Reverse Recovery Charge
TC = 25oC
TC = 175oC
Min.
-
-
-
-
-
-
-
Typ.
1.8
1.7
233
110
271
400
1740
Max
2.3
-
-
-
-
-
-
Unit
V
uJ
ns
nC
©2015 Fairchild Semiconductor Corporation
FGA6560WDF Rev. 1.1
3
www.fairchildsemi.com
3Pages Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Collector Current
Figure 14. Switching Loss vs.
Collector Current
Figure 15. Load Current Vs. Frequency
Figure 16. SOA Characteristics
Figure 17. Forward Characteristics
Figure 18. Reverse Recovery Current
©2015 Fairchild Semiconductor Corporation
FGA6560WDF Rev. 1.1
6
www.fairchildsemi.com
6 Page | |||
ページ | 合計 : 9 ページ | ||
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部品番号 | 部品説明 | メーカ |
FGA6560WDF | IGBT ( Insulated Gate Bipolar Transistor ) | Fairchild Semiconductor |