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FGP10N60UNDFのメーカーはFairchild Semiconductorです、この部品の機能は「IGBT ( Insulated Gate Bipolar Transistor )」です。 |
部品番号 | FGP10N60UNDF |
| |
部品説明 | IGBT ( Insulated Gate Bipolar Transistor ) | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとFGP10N60UNDFダウンロード(pdfファイル)リンクがあります。 Total 10 pages
FGP10N60UNDF
600 V, 10 A
Short Circuit Rated IGBT
Features
• Short Circuit Rated 10 us
• High Current Capability
• High Input Impedance
• Fast Switching
• RoHS Compliant
September 2013
General Description
Using advanced NPT IGBT technology, Fairchild’s the NPT
IGBTs offer the optimum performance for low-power inverter-
driven applications where low-losses and short-circuit rugged-
ness features are essential, such as sewing machine, CNC,
motor control and home appliances.
Applications
• Sewing Machine, CNC, Home Appliances, Motor Control
C
GCE
TO-220
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
PD
TJ
Tstg
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 100oC
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
G
E
Ratings
600
± 20
20
10
30
10
5
139
56
-55 to +150
-55 to +150
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (PCB Mount)(2)
Notes:
2: Mountde on 1” square PCB (FR4 or G-10 material)
©2012 Fairchild Semiconductor Corporation
FGP10N60UNDF Rev. C1
1
Typ.
-
-
-
Max.
0.9
3.5
62.5
Unit
V
V
A
A
A
A
A
W
W
oC
oC
Unit
oC/W
oC/W
oC/W
www.fairchildsemi.com
1 Page Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Qg Total Gate Charge
Qge Gate to Emitter Charge
Qgc Gate to Collector Charge
VCE = 400 V, IC = 10 A,
VGE = 1 V
Min.
-
-
-
Typ.
37
5
21
Max
Unit
nC
nC
nC
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
VFM Diode Forward Voltage
IF = 10 A
TC = 25oC
TC = 125oC
trr
Qrr
Diode Reverse Recovery Time
IF = 10 A, dIF/dt = 200 A/μs
Diode Reverse Recovery Charge
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
Min.
-
-
-
-
-
-
Typ.
1.8
1.7
37.7
78.9
75
221
Max
2.2
Unit
V
ns
nC
©2012 Fairchild Semiconductor Corporation
FGP10N60UNDF Rev. C1
3
www.fairchildsemi.com
3Pages Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Collector Current
30
10
td(on)
tr
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
1
0 5 10 15 20 25
Collector Current, IC [A]
Figure 15. Switching Loss vs.
Gate Resistance
1000
Eon
100 Eoff
Common Emitter
VCC = 400V, VGE = 15V
IC = 10A
10
TC = 25oC
TC = 125oC
5
0 10 20 30 40 50 60
Gate Resistance, RG [Ω]
Figure 17. Turn off Switching
SOA Characteristics
50
10
Safe Operating Area
VGE = 15V, TC = 125oC
1
1 10
100
1000
Collector-Emitter Voltage, VCE [V]
Figure 14. Turn-off Characteristics vs.
Collector Current
300
100
td(off)
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
tf
10
5
0 5 10 15 20 25
Collector Current, IC [A]
Figure 16. Switching Loss vs
Collector Current
1000
Eon
100 Eoff
10
0
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
5 10 15 20 25
Collector Current, IC [A]
Figure 18. Forward Characteristics
30
10
TJ = 125oC
TJ = 75oC
TJ = 25oC
1
0123
Forward Voltage, VF [V]
©2012 Fairchild Semiconductor Corporation
FGP10N60UNDF Rev. C1
6
www.fairchildsemi.com
6 Page | |||
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部品番号 | 部品説明 | メーカ |
FGP10N60UNDF | IGBT ( Insulated Gate Bipolar Transistor ) | Fairchild Semiconductor |