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FGP5N60UFDのメーカーはFairchild Semiconductorです、この部品の機能は「IGBT ( Insulated Gate Bipolar Transistor )」です。 |
部品番号 | FGP5N60UFD |
| |
部品説明 | IGBT ( Insulated Gate Bipolar Transistor ) | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとFGP5N60UFDダウンロード(pdfファイル)リンクがあります。 Total 11 pages
FGP5N60UFD
600V, 5A Field Stop IGBT
Features
• High current capability
• Low saturation voltage: VCE(sat) =1.9V @ IC = 5A
• High input impedance
• Fast switching
• RoHS compliant
Applications
• Induction Heating, UPS, SMPS, PFS
October 2008
tm
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new series
of Field Stop IGBTs offer the optimum performance for Induction
Heating, UPS, SMPS, and PFC applications where low conduc-
tion and switching losses are essential.
C
1 TO-220
1.Gate 2.Collector 3.Emitter
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. juntion temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
E
Ratings
600
± 20
10
5
15
81
32
-55 to +150
-55 to +150
300
Typ.
-
-
-
Max.
1.55
3.2
62.5
Units
V
V
A
A
A
W
W
oC
oC
oC
Units
oC/W
oC/W
oC/W
©2008 Fairchild Semiconductor Corporation
FGP5N60UFD Rev. A
1
www.fairchildsemi.com
1 Page Electrical Characteristics of the Diode TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
VFM Diode Forward Voltage
IF = 5A
TC = 25oC
TC = 125oC
trr
Qrr
Diode Reverse Recovery Time
IES =5A, dIES/dt = 200A/µs
Diode Reverse Recovery Charge
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
Min.
-
-
-
-
-
-
Typ.
1.7
1.5
30
140
25
173
Max
2.3
-
-
-
-
-
Units
V
ns
nC
FGP5N60UFD Rev. A
3
www.fairchildsemi.com
3Pages Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Gate Resistance
500
100
Common Emitter
VCC = 400V, VGE = 15V
IC = 5A
TC = 25oC
TC = 125oC
td(off)
tf
10
0 10 20 30 40 50
Gate Resistance, RG [Ω]
Figure 15. Turn-off Characteristics vs.
Collector Current
500
Common Emitter
VGE = 15V, RG = 20Ω
100 TC = 25oC
TC = 125oC
td(off)
Figure 14. Turn-on Characteristics vs.
Collector Current
100
Common Emitter
VGE = 15V, RG = 20Ω
TC = 25oC
TC = 125oC
tr
10
td(on)
1
2 4 6 8 10
Collector Current, IC [A]
Figure 16. Switching Loss vs Gate Resistance
2500
Common Emitter
VCC = 400V, VGE = 15V
IC = 5A
TC = 25oC
TC = 125oC
100
Eon
tf
1200
2 4 6 8 10
Collector Current, IC [A]
Figure 17. Switching Loss vs Collector Current
1000
Common Emitter
VGE = 15V, RG = 20Ω
TC = 25oC
TC = 125oC
100
Eon
Eoff
Eoff
40
0 10 20 30 40 50
Gate Resistance, RG [Ω]
Figure 18. Turn off Switching SOA
Characteristics
20
10
1
10
2 4 6 8 10
Collector Current, IC [A]
Safe Operating Area
VGE = 15V, TC = 125oC
0.1
1 10
100
Collector-Emitter Voltage, VCE [V]
1000
FGP5N60UFD Rev. A
6
www.fairchildsemi.com
6 Page | |||
ページ | 合計 : 11 ページ | ||
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部品番号 | 部品説明 | メーカ |
FGP5N60UFD | IGBT ( Insulated Gate Bipolar Transistor ) | Fairchild Semiconductor |